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参数资料
| 型号： | 2N6796-QR |
| 厂商： | SEMELAB LTD |
| 元件分类： | JFETs |
| 英文描述： | 8 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 封装： | TO-39, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 18K |
| 代理商： | 2N6796-QR |
Document Number 3095
Issue 1
2N6796
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
TMOS FET
ENHANCEMENT
N - CHANNEL
FEATURES
V(BR)DSS = 100V
ID = 8A
RDSON = 0.18
VDS
Drain–Source Voltage
VDGR
Drain–Source Voltage (RGS = 1.0 m)
VGS
Gate–Source Voltage
ID
Drain Current Continuous TCase = 25°C
IDM
Drain Current Pulsed
PD
Total Device Dissipation @ TCase = 25°C
Derate above 25°C
TJ , TSTG
Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
RθJC
Thermal Resistance Junction to Case
RθJA
Thermal Resistance Junction to Ambient
TL
Maximum Lead Temperature 1.6mm from Case for 10 secs.
100V
±20V
8.0A
32A
25W
0.2W/°C
–55 to +150°C
5.0°C/W
175°C/W
300°C
MECHANICAL DATA
Dimensions in mm (inches)
TO–39 PACKAGE (TO-205AF)
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PIN 1 – Source
Underside View
PIN 2 – Gate
PIN 3 – Drain
0.89
(0.035)
max.
12.70
(0.500)
min.
4.06 (0.16)
4.57 (0.18)
8.64 (0.34)
9.40 (0.37)
8.01 (0.315)
9.01 (0.355)
0.41 (0.016)
0.53 (0.021)
dia.
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.53 (0.021)
2.54
(0.100)
5.08 (0.200)
typ.
45°
1
2
3
相关PDF资料 |
PDF描述 |
|---|---|
| 2N6796-JQR | 8 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 2N6796.MOD | 8 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 2N6797 | 5.5 A, 150 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 2N6798PBF | 5.5 A, 200 V, 0.42 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 2N6800 | 3 A, 400 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6796U | 制造商:Microsemi Corporation 功能描述:MOSFET N-CH 100V 18LCC |
| 2N6796UJANTX | 制造商:International Rectifier 功能描述: |
| 2N6797 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 3.5A I(D) | TO-39 |
| 2N6798 | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 200V 22A 3-Pin TO-39 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 200V 5.5A 3PIN TO-39 - Bulk 制造商:International Rectifier 功能描述:N CH MOSFET 200V 5.5A TO-205AF 制造商:International Rectifier 功能描述:N CH MOSFET, 200V, 5.5A, TO-205AF 制造商:International Rectifier 功能描述:N CH MOSFET, 200V, 5.5A, TO-205AF; Transistor Polarity:N Channel; Continuous Drain Current Id:5.5A; Drain Source Voltage Vds:200V; On Resistance Rds(on):400mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V ;RoHS Compliant: No |
| 2N6798_10 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:N-CHANNEL MOSFET |
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