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参数资料
| 型号： | 2N6845-JQR-B |
| 厂商： | SEMELAB LTD |
| 元件分类： | JFETs |
| 英文描述： | 4 A, 100 V, 0.69 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 封装： | HERMETIC SEALED, METAL, TO-39, 3 PIN |
| 文件页数： | 2/2页 |
| 文件大小： | 36K |
| 代理商： | 2N6845-JQR-B |
Document Number 5748
Issue 2
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
2N6845
IRFF9120
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS = 0
ID = - 1mA
Reference to 25°C
ID = - 1mA
VGS = - 10V
ID = - 2.6A
VGS = - 10V
ID = - 4.0A
VDS = VGS
ID = -250A
VDS > -15V
ID = -2.6A
VDS = - 80V
VGS = 0
TJ = 125°C
VGS = 20V
VGS = –20V
VGS = 0
VDS = - 25V
f = 1MHz
VGS = -10V
ID = -4.0A
VDS = -50V
VDD = -50V
ID = - 4.0A
RG = 7.5
Mosfet symbol showing the
integral reverse p-n junction diode
IS = - 4.0A
TJ = 25°C
VGS = 0V
IF = -4.0A
TJ = 25°C
di / dt ≤ -100A/sVDD ≤ -50V
ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated)
Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On–State
Resistance 1
Gate Threshold Voltage
Forward Transconductance 1
Drain-to-Source Leakage Current
Forward Gate – Source Leakage
Reverse Gate – Source Leakage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Continuous Source Current
Pulse Source Current
Diode Forward Voltage1
Reverse Recovery Time1
Reverse Recovery Charge1
Forward Turn–On Time
- 100
- 0.10
0.60
0.69
- 2
- 4
1.25
-25
-250
100
-100
380
170
45
4.3
16.3
1.3
4.7
1.0
9.0
60
100
50
70
- 4.0
- 16
- 4.8
200
3.1
V
V/°C
V
S
A
nA
pF
nC
ns
A
V
ns
C
BVDSS
TJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
IS
ISM
VSD
trr
Qrr
ton
STATIC ELECTRICAL RATINGS
Notes
1) Pulse Test: Pulse Width
≤ 300ms, δ≤ 2%
DYNAMIC CHARACTERISTICS
SOURCE – DRAIN DIODE CHARACTERISTICS
Negligible
D
G
S
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6845LCC4 | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:P–CHANNEL POWER MOSFET |
| 2N6845UJANTX | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 100V 3.5A 18-Pin LLCC |
| 2N6846 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 2A I(D) | TO-205AF |
| 2N6847 | 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 200V 2.5A 3PIN TO-39 - Bulk 制造商:Rochester Electronics LLC 功能描述:HEXFET, HI-REL - Bulk 制造商:International Rectifier 功能描述:P CH MOSFET, -200V, 2.5A, TO-205AF; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.5A; Drain Source Voltage Vds:-200V; On Resistance Rds(on):1.5ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V ;RoHS Compliant: No |
| 2N6847UJANTXV | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 200V 2.1A 18-Pin LLCC |
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