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参数资料
| 型号： | 2N6851R1 |
| 厂商： | SEMELAB LTD |
| 元件分类： | JFETs |
| 英文描述： | 4 A, 200 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 封装： | HERMETIC SEALED, METAL, TO-39, 3 PIN |
| 文件页数： | 1/1页 |
| 文件大小： | 12K |
| 代理商： | 2N6851R1 |
2N6851
P-Channel MOSFET.
V
DSS = 200V
I
D = 4A
R
DS(ON) = 0.8
All Semelab hermetically sealed products can be
processed in accordance with the requirements
of BS, CECC and JAN, JANTX, JANTXV and
JANS specifications.
Parameter
Min.
Typ.
Max.
Units
V
DSS
Drain – Source Breakdown Voltage
200
V
I
D
Continuous Drain Current
4
A
P
D
Power Dissipation
25
W
R
DS(ON)
Static Drain – Source On–State Resistance
0.8
C
ISS
Input Capacitance
700
pF
Q
g
Total Gate Charge
34.8
nC
t
td(on)
Turn–On Delay Time
50
ns
t
tr
Rise Time
100
ns
t
td(off)
Turn–Off Delay Time
100
ns
t
f
Fall Time
80
ns
This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Generated
11-Oct-02
TO39 (TO205AF)
PINOUTS
1 – Source
2 – Gate
3 - Drain
P-Channel MOSFET
in a
Hermetically sealed TO39
Metal Package.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Dimensions in mm (inches).
0.89
(0.035)
max.
12.70
(0.500)
min.
4.06 (0.16)
4.57 (0.18)
8.64 (0.34)
9.40 (0.37)
8.01 (0.315)
9.01 (0.355)
0.41 (0.016)
0.53 (0.021)
dia.
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.53 (0.021)
2.54
(0.100)
5.08 (0.200)
typ.
45°
1
2
3
相关PDF资料 |
PDF描述 |
|---|---|
| 2N6851 | 4 A, 200 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 2N6851LCC4-JQR-A | 4 A, 200 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 2N6851TXV | 4 A, 200 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 2N6851TXV | 4 A, 200 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 2N6851 | 4 A, 200 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6851U | 制造商:未知厂家 制造商全称:未知厂家 功能描述:P-Channel |
| 2N685A | 制造商:CENTRAL 制造商全称:Central Semiconductor Corp 功能描述:SILICON CONTROLLED RECTIFIER 25 AMPS, 25 THRU 800 VOLTS |
| 2N685JANTX | 制造商:Microsemi Corporation 功能描述:Thyristor SCR 200V 150A |
| 2N685-LT | 制造商:n/a 功能描述:SCR |
| 2N686 | 功能描述:SCR 250V 25A RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
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