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参数资料
| 型号： | 2N6976 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 5 A, 500 V, N-CHANNEL IGBT, TO-204AA |
| 文件页数： | 1/6页 |
| 文件大小： | 67K |
| 代理商： | 2N6976 |
2001 Fairchild Semiconductor Corporation
2N6975, 2N6976, 2N6977, 2N6978 Rev. A
Package
JEDEC TO-204AA
BOTTOM VIEW
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
2N6975
TO-204AA
2N6976
TO-204AA
2N6977
TO-204AA
2N6978
TO-204AA
NOTE: When ordering, use the entire part number.
COLLECTOR
(FLANGE)
EMITTER
GATE
C
E
G
Features
5A, 400V and 500V
VCE(ON) 2V
TFI 1s, 0.5s
Low On-State Voltage
Fast Switching Speeds
High Input Impedance
Applications
Power Supplies
Motor Drives
Protection Circuits
Description
The 2N6975, 2N6976, 2N6977 and the 2N6978 are n-channel
enhancement-mode
insulated
gate
bipolar
transistors
(IGBTs)
designed for high-voltage, low on-dissipation applications such as
switching regulators and motor drivers. These types can be operated
directly from low-power integrated circuits.
April 1995
2N6975, 2N6976,
2N6977, 2N6978
5A, 400V and 500V N-Channel IGBTs
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specied.
2N6975/2N6977
(Note 1)
2N6976/2N6978
(Note 1)
UNITS
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCES
400
500
V
Collector-Gate Voltage (RGE = 1M) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCGR
400
500
V
Reverse Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VCES(REV.)
5
V
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGE
±20
V
Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC
5
A
Collector Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
10
A
Power Dissipation Total at TC = +25
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
100
W
Power Dissipation Derating TC > +25
oC
0.8
W/oC
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to +150
oC
NOTE:
1. JEDEC registered value.
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,567,641
4,587,713
4,598,461
4,605,948
4,618,872
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
相关PDF资料 |
PDF描述 |
|---|---|
| 2N697 | NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 2N6987 | POWER TRANSISTOR, TO-116 |
| 2N6988 | SMALL SIGNAL TRANSISTOR |
| 2N6989 | Si, POWER TRANSISTOR, TO-116 |
| 2N6987 | Si, POWER TRANSISTOR, TO-116 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6977 | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:5A, 400V and 500V N-Channel IGBTs |
| 2N6978 | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:5A, 400V and 500V N-Channel IGBTs |
| 2N697A | 功能描述:两极晶体管 - BJT NPN Med Pwr RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N697S | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 40V 3PIN TO-5 - Bulk |
| 2N698 | 制造商:Powerex Power Semiconductors 功能描述: |
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