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参数资料
| 型号： | 2N7000_ND26Z |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封装： | LEAD FREE, TO-92, 3 PIN |
| 文件页数： | 1/10页 |
| 文件大小： | 235K |
| 代理商： | 2N7000_ND26Z |
November 1995
2N7000 / 2N7002 / NDS7002A
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
___________________________________________________________________________________________
Absolute Maximum Ratings
T
A = 25°C unless otherwise noted
Symbol
Parameter
2N7000
2N7002
NDS7002A
Units
V
DSS
Drain-Source Voltage
60
V
DGR
Drain-Gate Voltage (R
GS
< 1 M
)
60
V
GSS
Gate-Source Voltage - Continuous
±20
V
- Non Repetitive (tp < 50s)
±40
I
D
Maximum Drain Current - Continuous
200
115
280
mA
- Pulsed
500
800
1500
P
D
Maximum Power Dissipation
400
200
300
mW
Derated above 25
oC
3.2
1.6
2.4
mW/°C
T
J,TSTG
Operating and Storage Temperature Range
-55 to 150
-65 to 150
°C
T
L
Maximum Lead Temperature for Soldering
Purposes, 1/16" from Case for 10 Seconds
300
°C
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient
312.5
625
417
°C/W
2N7000.SAM Rev. A1
These N-Channel enhancement mode field effect transistors
are produced using Fairchild's proprietary, high cell density,
DMOS technology. These products have been designed to
minimize on-state resistance while provide rugged, reliable,
and fast switching performance. They can be used in most
applications requiring up to 400mA DC and can deliver
pulsed currents up to 2A. These products are particularly
suited for low voltage, low current applications such as small
servo motor control, power MOSFET gate drivers, and other
switching applications.
High density cell design for low R
DS(ON).
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
S
D
G
S
G
D
TO-92
1997 Fairchild Semiconductor Corporation
2N7000
(TO-236AB)
2N7002/NDS7002A
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N7000P | 功能描述:MOSFET - RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7000RLRA | 功能描述:MOSFET 60V 200mA N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7000RLRAG | 功能描述:MOSFET 60V 200mA N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7000RLRM | 功能描述:MOSFET 60V 200mA N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7000RLRMG | 功能描述:MOSFET 60V 200mA N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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