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| 型号： | 2N7000 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 200MA TO-92 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品目录绘图： | MOSFET TO-92 Pkg |
| 标准包装： | 2,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 200mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 5 欧姆 @ 500mA，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 1mA |
| 输入电容 (Ciss) @ Vds： | 50pF @ 25V |
| 功率 - 最大： | 400mW |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-226-3、TO-92-3 标准主体 |
| 供应商设备封装： | TO-92-3 |
| 包装： | 散装 |
| 产品目录页面： | 1605 (CN2011-ZH PDF) |
| 其它名称： | 2N7000FS |
November 1995
2N7000 / 2N7002 / NDS7002A
N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode field effect transistors
are produced using Fairchild's proprietary, high cell density,
DMOS technology. These products have been designed to
minimize on-state resistance while provide rugged, reliable,
and fast switching performance. They can be used in most
applications requiring up to 400mA DC and can deliver
Features
High density cell design for low R DS(ON) .
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
pulsed currents up to 2A. These products are particularly
suited for low voltage, low current applications such as small
servo motor control, power MOSFET gate drivers, and other
switching applications.
___________________________________________________________________________________________
D
G
D
G
S
TO-92
2N7000
Absolute Maximum Ratings
(TO-236AB)
2N7002/NDS7002A
T A = 25°C unless otherwise noted
S
Symbol
V DSS
V DGR
V GSS
Parameter
Drain-Source Voltage
Drain-Gate Voltage (R GS < 1 M ? )
Gate-Source Voltage - Continuous
2N7000
2N7002
60
60
± 20
NDS7002A
Units
V
V
V
- Non Repetitive (tp < 50μs)
± 40
Derated above 25 C
I D
P D
T J ,T STG
T L
Maximum Drain Current - Continuous
- Pulsed
Maximum Power Dissipation
o
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering
200
500
400
3.2
-55 to 150
115
800
200
1.6
300
280
1500
300
2.4
-65 to 150
mA
mW
mW/°C
°C
°C
Purposes, 1/16" from Case for 10 Seconds
THERMAL CHARACTERISTICS
R θ JA
Thermal Resistance, Junction-to-Ambient
312.5
625
417
°C/W
? 1997 Fairchild Semiconductor Corporation
2N7000.SAM Rev. A1
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相关代理商/技术参数 |
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| 2N-7000 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2N7000 AMO | 功能描述:MOSFET TRENCH 31V-99V G2 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7000,126 | 功能描述:MOSFET TRENCH 31V-99V G2 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7000 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N LOGIC TO-92 |
| 2N7000/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Small Signal MOSFET 200 mAmps， 60 Volts |
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