参数资料
型号: 2N7000
厂商: CALOGIC LLC
元件分类: 小信号晶体管
英文描述: N-Channel Enhancement-Mode MOS Transistor
中文描述: 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
封装: PLASTIC, TO-226AA, 3 PIN
文件页数: 2/2页
文件大小: 25K
代理商: 2N7000
2N7000 / BS170L
CORPORATION
ABSOLUTE MAXIMUM RATINGS (TA = 25
oC unless otherwise specified)
SYMBOL
PARAMETERS
LIMITS
UNITS
TEST CONDITIONS
VDS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
±40
ID
Continuous Drain Current
0.2
A
TA = 25
oC
0.13
TA = 100
oC
IDM
Pulsed Drain Current
1
0.5
PD
Power Dissipation
1
0.4
W
TA = 25
oC
0.16
TA = 100
oC
TJ
Operating Junction Temperature Range
-55 to 150
oC
Tstg
Storage Temperature Range
-55 to 150
TL
Lead Temperature (1/16" from case for 10 sec.)
300
THERMAL RESISTANCE RATINGS
SYMBOL
THERMAL RESISTANCE
LIMITS
UNITS
RthJA
Junction-to-Ambient
312.5
K/W
NOTE:
1. Pulse width limited by maximum junction temperature.
SPECIFICATIONS
1
SYMBOL
PARAMETER
MIN
TYP
2
MAX
UNIT
TEST CONDITIONS
STATIC
V(BR)DSS
Drain-Source Breakdown Voltage
60
70
V
ID = 10
A, VGS = 0V
VGS(th)
Gate-Threshold Voltage
0.8
1.9
3
VDS = VGS, ID = 1mA
IGSS
Gate-Body Leakage
±10
nA
VGS =
±15V, VDS = 0V
IDSS
Zero Gate Voltage Drain Current
1
A
VDS = 48V, VGS = 0V
1000
TC = 125
oC
ID(ON)
On-State Drain Current
3
75
210
mA
VDS = 10V, VGS = 4.5V
rDS(ON)
Drain-Source On-Resistance
3
4.8
5.3
4VGS = 4.5V, ID = 75mA
2.5
5
VGS = 10V, ID = 0.5A
4.4
9
TC = 125
oC
VDS(ON)
Drain-Source On-Voltage
3
0.36
0.4
V
4VGS = 4.5V, ID = 75mA
1.25
2.5
VGS = 10V, ID = 0.5A
2.2
4.5
TC = 125
oC4
gFS
Forward Transconductance
3
100
170
mS
VDS = 10V, ID = 0.2A
gOS
Common Source Output Conductance
3, 4
500
SVDS = 5V, ID = 50mA
DYNAMIC
Ciss
Input Capacitance
16
60
pF
VDS = 25V, VGS = 0V, f = 1MHz
Coss
Output Capacitance
4
11
25
Crss
Reverse Transfer Capacitance
2
5
SWITCHING
tON
Turn-On Time
7
10
nS
VDD = 15V, RL = 25
, ID = 0.5A
VGEN = 10V, RG = 25
(Switching time is essentially
independent of operating temperature)
tOFF
Turn-Off Time
7
10
NOTES: 1. TA = 25
oC unless otherwise specified.
2. For design aid only, not subject to production testing.
3. Pulse test; PW =
≤300S, duty cycle ≤3%.
4. This parameter not registered with JEDEC.
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