- 您现在的位置：买卖IC网 > PDF目录155751 > 2N7000P003 (SUPERTEX INC) 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 PDF资料下载
参数资料
| 型号： | 2N7000P003 |
| 厂商： | SUPERTEX INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封装： | TO-92, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 524K |
| 代理商： | 2N7000P003 |
2N7000
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
ISS and fast switching speeds
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
Complementary N- and P-Channel devices
Applications
Motor controls
Converters
Ampliers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
General Description
The Supertex 2N7000 is an enhancement-mode (normally-
off) transistor that utilizes a vertical DMOS structure
and Supertex’s well-proven silicon-gate manufacturing
process. This combination produces a device with the
power handling capabilities of bipolar transistors, and the
high input impedance and positive temperature coefcient
inherent in MOS devices. Characteristic of all MOS
structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Ordering Information
Device
Package
BV
DSS/BVDGS
(V)
R
DS(ON)
(max)
(Ω)
I
D(ON)
(min)
(mA)
2N7000
TO-92
60
5.0
75
2N7000-G
Absolute Maximum Ratings
Parameter
Value
Drain to source voltage
BV
DSS
Drain to gate voltage
BV
DGS
Gate to source voltage
±30V
Operating and storage temperature
-55°C to +150°C
Soldering temperature1
+300°C
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Notes:
1. Distance of 1.6mm from case for 10 seconds.
Pin Conguration
N-Channel Enhancement-Mode
Vertical DMOS FETs
D
G
S
TO-92
(front view)
-G indicates package is RoHS compliant (‘Green’)
相关PDF资料 |
PDF描述 |
|---|---|
| 2NT1-1N | TOGGLE SWITCH, DPDT, LATCHED, PANEL MOUNT |
| 2NT1-1E | TOGGLE SWITCH, DPDT, LATCHED, PANEL MOUNT |
| 2NT887-10H | TOGGLE SWITCH, DPDT, LATCHED, PANEL MOUNT-THREADED |
| 2NT91-7E | TOGGLE SWITCH, DPDT, MOMENTARY, PANEL MOUNT-THREADED |
| 2NT91-31M | TOGGLE SWITCH, DPDT, LATCHED, PANEL MOUNT-THREADED |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N7000RLRA | 功能描述:MOSFET 60V 200mA N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7000RLRAG | 功能描述:MOSFET 60V 200mA N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7000RLRM | 功能描述:MOSFET 60V 200mA N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7000RLRMG | 功能描述:MOSFET 60V 200mA N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7000RLRP | 功能描述:MOSFET 60V 200mA N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。