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| 型号： | 2N7000RLRAG |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/4页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 200MA TO-92 |
| 产品目录绘图： | MOSFET TO-92 Pkg |
| 标准包装： | 10 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 200mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 5 欧姆 @ 500mA，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 1mA |
| 输入电容 (Ciss) @ Vds： | 60pF @ 25V |
| 功率 - 最大： | 350mW |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-226-3、TO-92-3（TO-226AA）成形引线 |
| 供应商设备封装： | TO-92-3 |
| 包装： | 剪切带 (CT) |
| 产品目录页面： | 1558 (CN2011-ZH PDF) |
| 其它名称： | 2N7000RLRAGOSCT |
2N7000G
Small Signal MOSFET
200 mAmps, 60 Volts
N ? Channel TO ? 92
Features
? AEC Qualified
? PPAP Capable
? This is a Pb ? Free Device*
MAXIMUM RATINGS
http://onsemi.com
200 mAMPS
60 VOLTS
R DS(on) = 5 W
N ? Channel
D
Rating
Drain Source Voltage
Symbol
V DSS
Value
60
Unit
Vdc
Drain ? Gate Voltage (R GS = 1.0 M W )
Gate ? Source Voltage
? Continuous
? Non ? repetitive (t p ≤ 50 m s)
Drain Current
? Continuous
? Pulsed
Total Power Dissipation @ T C = 25 ° C
Derate above 25 ° C
V DGR
V GS
V GSM
I D
I DM
P D
60
± 20
± 40
200
500
350
2.8
Vdc
Vdc
Vpk
mAdc
mW
mW/ ° C
G
TO ? 92
CASE 29
STYLE 22
S
12
Operating and Storage Temperature
Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction ? to ? Ambient
T J , T stg
Symbol
R q JA
? 55 to +150
Max
357
° C
Unit
° C/W
3
STRAIGHT LEAD
BULK PACK
1
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
Maximum Lead Temperature for
Soldering Purposes, 1/16 ″ from case
for 10 seconds
T L
300
° C
MARKING DIAGRAM
AND PIN ASSIGNMENT
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1
2N
7000
AYWW G
G
3
Source
2
Drain
Gate
A = Assembly Location
Y = Year
WW = Work Week
G = Pb ? Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*For additional information on our Pb ? Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
? Semiconductor Components Industries, LLC, 2011
April, 2011 ? Rev. 8
1
Publication Order Number:
2N7000/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N7000RLRM | 功能描述:MOSFET 60V 200mA N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7000RLRMG | 功能描述:MOSFET 60V 200mA N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7000RLRP | 功能描述:MOSFET 60V 200mA N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7000RLRPG | 功能描述:MOSFET 60V 200mA N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7000T/R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 200MA I(D) | TO-92VAR |
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