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| 型号： | 2N7002-7-F |
| 厂商： | Diodes Inc |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 115MA SOT23-3 |
| 产品变化通告： | Wire Change 22/Sept/2008 Encapsulate Change 15/May/2008 |
| 产品目录绘图： | SOT-23 Package Top SOT-23 Package Side 1 SOT-23 Package Side 2 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 115mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 7.5 欧姆 @ 50mA，5V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 输入电容 (Ciss) @ Vds： | 50pF @ 25V |
| 功率 - 最大： | 300mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1577 (CN2011-ZH PDF) |
| 其它名称： | 2N7002-FDIDKR |
2N7002
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Drain-Gate Voltage R GS ? 1.0M ?
Symbol
V DSS
V DGR
Value
60
60
Units
V
V
Gate-Source Voltage
Continuous
Pulsed
V GSS
±20
±40
V
Continuous Drain Current (Note 6) V GS = 10V
Continuous Drain Current (Note 7) V GS = 10V
Steady
State
Steady
State
T A = +25°C
T A = +85°C
T A = +100°C
T A = +25°C
T A = +85°C
T A = +100°C
I D
I D
170
120
105
210
150
135
mA
mA
Maximum Body Diode Forward Current (Note 7)
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Pulsed
Continuous
I S
I DM
0.5
2
800
A
mA
Thermal Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
(Note 6)
(Note 7)
(Note 6)
(Note 7)
(Note 7)
P D
R θ JA
R θ JC
T J, T STG
370
540
348
241
91
-55 to +150
mW
°C/W
°C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV DSS
60
70
?
V
V GS = 0V, I D = 10μA
Zero Gate Voltage Drain Current
Gate-Body Leakage
@ T C = +25°C
@ T C = +125°C
I DSS
I GSS
?
?
?
?
1.0
500
±10
μA
nA
V DS = 60V, V GS = 0V
V GS = ±20V, V DS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V GS(th)
1.0
?
2.5
V
V DS = V GS , I D = 250μA
Static Drain-Source On-Resistance
@ T J = +25°C
@ T J = +25°C
R DS(ON)
?
3.2
?
7.5
5.0
?
V GS = 5.0V, I D = 0.05A
V GS = 10V, I D = 0.5A
@ T J = +125°C
4.4
13.5
V GS = 10V, I D = 0.5A
On-State Drain Current
Forward Transconductance
Diode Forward Voltage
I D(ON)
g FS
V SD
0.5
80
?
1.0
?
0.78
?
?
1.5
A
mS
V
V GS = 10V, V DS = 7.5V
V DS =10V, I D = 0.2A
V GS = 0V, I S = 115mA
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge (V GS = 4.5V)
Gate-Source Charge
Gate-Drain Charge
C iss
C oss
C rss
R g
Q g
Q gs
Q gd
?
?
?
??
??
??
??
22
11
2.0
120
223
82
178
50
25
5.0
?
?
?
?
pF
pF
pF
Ω
pC
V DS = 25V, V GS = 0V
f = 1.0MHz
V DS = 0V, V GS = 0V,
f = 1.0MHz
V DS = 10V, I D = 250mA
SWITCHING CHARACTERISTICS (Note 9)
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
t D(on)
t r
t D(off)
t f
?
?
??
??
2.8
3.0
7.6
5.6
?
?
?
?
ns
V DD = 30V, I D = 0.2A,
R L = 150 ? , V GEN = 10V,
R GEN = 25 ?
Notes:
6. Device mounted on FR-4 PCB, with minimum recommended pad layout
7. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
2N7002
Document number: DS11303 Rev. 33 - 2
2 of 5
www.diodes.com
July 2013
? Diodes Incorporated
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N7002-7-F-31 | 制造商:Diodes Incorporated 功能描述:N-CHANNEL MOSFET/ SOT-23 (LEAD FREE) |
| 2N7002A | 制造商:KEC 制造商全称:KEC(Korea Electronics) 功能描述:N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 2N7002A_09 | 制造商:KEC 制造商全称:KEC(Korea Electronics) 功能描述:FIELD EFFECT TRANSISTOR |
| 2N7002A_13 | 制造商:KEC 制造商全称:KEC(Korea Electronics) 功能描述:N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 2N7002A-13 | 制造商:Zetex / Diodes Inc 功能描述:Trans MOSFET N-CH 60V 0.22A 3-Pin SOT-23 T/R |
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