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参数资料
| 型号： | 2N7002-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 115MA SOT23 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 115mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 7.5 欧姆 @ 500mA，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 输入电容 (Ciss) @ Vds： | 50pF @ 25V |
| 功率 - 最大： | 200mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | TO-236 |
| 包装： | 带卷 (TR) |
2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS (T A = 25 _ C UNLESS OTHERWISE NOTED)
Single
Total Quad
Parameter
Drain-Source Voltage
Gate-Source Voltage — Non-Repetitive
Gate-Source Voltage — Continuous
Symbol
V DS
V GSM
V GS
2N7000
60
" 40
" 20
2N7002
60
" 40
" 20
VQ1000J
60
" 30
" 20
VQ1000P
60
" 20
VQ1000J/P
BS170
60
" 25
" 20
Unit
V
Continuous Drain Current
(T J = 150 _ C)
T A = 25 _ C
T A = 100 _ C
I D
0.2
0.13
0.115
0.073
0.225
0.14
0.225
0.14
0.5
0.175
A
Pulsed Drain Current a
I DM
0.5
0.8
1
1
Power Dissipation
T A = 25 _ C
T A = 100 _ C
P D
0.4
0.16
0.2
0.08
1.3
0.52
1.3
0.52
2
0.8
0.83
W
Thermal Resistance, Junction-to-Ambient
R thJA
312.5
625
96
96
62.5
156
_ C/W
Operating Junction and
Storage Temperature Range
T J , T stg
– 55 to 150
_ C
Notes
a. Pulse width limited by maximum junction temperature.
b. t p v 50 m s.
SPECIFICATIONS 2N7000 AND 2N7002 (T A = 25 _ C UNLESS OTHERWISE NOTED)
Limits
2N7000
2N7002
Parameter
Symbol
Test Conditions
Typ a
Min
Max
Min
Max
Unit
Static
Drain-Source Breakdown Voltage
V (BR)DSS
V GS = 0 V, I D = 10 m A
70
60
60
Gate-Threshold Voltage
V GS(th)
V DS = V GS , I D = 1 mA
V DS = V GS , I D = 0.25 mA
2.1
2.0
0.8
3
1
2.5
V
Gate-Body Leakage
I GSS
V DS = 0 V, V GS = " 15 V
V DS = 0 V, V GS = " 20 V
" 10
" 100
nA
V DS = 48 V, V GS = 0 V
1
Zero Gate Voltage Drain Current
I DSS
T C = 125 _ C
V DS = 60 V, V GS = 0 V
1000
1
m A
T C = 125 _ C
500
On-State Drain Current b
I D(on)
V DS = 10 V, V GS = 4.5 V
V DS = 7.5 V, V GS = 10 V
0.35
1
0.075
0.5
A
V GS = 4.5 V, I D = 0.075 A
V GS = 5 V, I D = 0.05 A
4.5
3.2
5.3
7.5
Drain-Source On-Resistance b
r DS(on)
T C = 125 _ C
V GS = 10 V, I D = 0.5 A
T J = 125 _ C
5.8
2.4
4.4
5
9
13.5
7.5
13.5
W
Forward Transconductance b
Common Source Output Conductance b
g fs
g os
V DS = 10 V, I D = 0.2 A
V DS = 5 V, I D = 0.05 A
0.5
100
80
mS
Dynamic
Input Capacitance
C iss
22
60
50
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V DS = 25 V, V GS = 0 V
f = 1 MHz
11
2
25
5
25
5
pF
www.vishay.com
11-2
Document Number: 70226
S-04279 — Rev. F, 16-Jul-01
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相关代理商/技术参数 |
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| 2N7002-T1-JIT | 制造商:Vishay Intertechnologies 功能描述:2N7002-T1 WITH JIT FOR COMPAQ |
| 2N7002T-7 | 功能描述:MOSFET 60V 150mW RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7002T-7-F | 功能描述:MOSFET 60V 150mW RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7002TA | 功能描述:MOSFET N Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7002-TA | 制造商:Vishay Siliconix 功能描述:TRANS MOSFET N-CH 60V 0.115A 3PIN TO-236 - Tape and Reel |
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