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参数资料
| 型号： | 2N7002KW |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 3/5页 |
| 文件大小： | 156K |
| 代理商： | 2N7002KW |
PAGE . 3
May 21.2010-REV.01
2N7002KW
Fig. 1-TYPICAL FORWARD CHARACTERISTIC
FIG.1- Output Characteristic
Typical Characteristics Curves (T =25 C,unless otherwise noted)
A
O
Typical Characteristics Curves (T =25 C,unless otherwise noted)
A
O
FIG.2- Transfer Characteristic
FIG.3- On Resistance vs Drain Current
FIG.4- On Resistance vs Gate to Source Voltage
FIG.5- On Resistance vs Junction Temperature
0
0.2
0.4
0.6
0.8
1
1.2
01
23
45
VDS - Drain-to-Source Voltage (V)
I D
-
D
ra
in
-to
-S
o
u
rc
e
C
u
rr
e
n
t
(A
)
VGS= 6.0~10V
5.0V
4.0V
3.0V
V = 10V ~ 6.0V
GS
4.0V
3.0V
5.0V
0
0.2
0.4
0.6
0.8
1
1.2
012
3456
VGS - Gate-to-Source Voltage (V)
ID
-
D
rai
n
S
o
u
rce
C
u
rr
en
t
(A
)
V =10V
DS
V =10V
DS
V =10V
DS
T =25
J
℃
T =25
J
℃
T =25
J
℃
0
1
2
3
4
5
234
5678
9
10
VGS - Gate-to-Source Voltage (V)
ID =200m A
ID =500m A
R
-On-Resistance
(
)
DS(ON)
W
I =200mA
D
0
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1
ID -Drain Current(A)
VGS =4.5V
VGS=10V
R
-On-Resistance
(
)
DS(ON)
W
0.6
0.8
1
1.2
1.4
1.6
1.8
-50
-25
0
25
50
75
100
125
150
TJ - Junction Temperature (
oC)
R
DS
(O
N)
-
O
n-
R
es
is
tanc
e(
N
or
m
al
iz
ed)
VGS =10V
ID =500mA
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N7002KW _R1 _00001 | 制造商:PanJit Touch Screens 功能描述: |
| 2N7002KW_ R2 _00001 | 制造商:PanJit Touch Screens 功能描述: |
| 2N7002KW_10 | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:60V N-Channel Enhancement Mode MOSFET - ESD Protected |
| 2N7002KW-TP | 制造商:Micro Commercial Components (MCC) 功能描述:Trans MOSFET N-CH 60V 0.34A 3-Pin SOT-323 T/R |
| 2N7002L | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23 |
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