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参数资料
| 型号： | 2N7002T-TP |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 4/4页 |
| 文件大小： | 140K |
| 代理商： | 2N7002T-TP |
MCC
Revision: 4
2009/02/01
TM
Micro Commercial Components
www.mccsemi.com
4 of 4
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Aerospace or Military Applications.
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Ordering Information
Device
Packing
(Part Number)-TP
Tape&Reel;3Kpcs/Reel
3
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PDF描述 |
|---|---|
| 2N7002WT/R7 | 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2N7002W | 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2N7002 | 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2N7002 | 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N7002V | 功能描述:MOSFET N-Chan Enhancement Mode Field Effect RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7002V_1 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 2N7002V_10 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| 2N7002V-7 | 功能描述:MOSFET 60V 150mW RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7002V-7-F | 功能描述:MOSFET 60V 150mW RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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