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参数资料
| 型号： | 2N7002WT/R7 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 3/5页 |
| 文件大小： | 162K |
| 代理商： | 2N7002WT/R7 |
PAGE . 3
STAD-JUL.26.2007
2N7002W
Fig. 1-TYPICAL FORWARD CHARACTERISTIC
FIG.1- Output Characteristic
Typical Characteristics Curves (T =25 C,unless otherwise noted)
A
O
FIG.2- Transfer Characteristic
FIG.3- On Resistance vs Drain Current
FIG.4- On Resistance vs Gate to Source Voltage
FIG.5- On Resistance vs Junction Temperature
0
0.2
0.4
0.6
0.8
1
1.2
01
23
45
VDS - Drain-to-Source Voltage (V)
I D
-
D
ra
in
-to
-S
o
u
rc
e
C
u
rr
e
n
t
(A
)
V = 10V ~ 6.0V
GS
4.0V
3.0V
5.0V
0
0.2
0.4
0.6
0.8
1
1.2
01
234
56
VGS - Gate-to-Source Voltage (V)
ID
-
D
ra
in
S
o
u
rc
e
C
u
rre
n
t
(A
)
V =10V
DS
V =10V
DS
V =10V
DS
T =25 C
J
O
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50
-25
0
25
50
75
100
125
150
TJ - Junction Temperature (
oC)
R
DS
(O
N)
-
O
n-
R
e
s
is
tanc
e(
N
o
rm
al
iz
ed)
V =10V
I =500mA
GS
D
0
2
4
6
8
10
23
45
67
89
10
VGS - Gate-to-Source Voltage (V)
I =500mA
D
T =125 C
J
O
T =25 C
J
O
R
-On-Resistance
(
)
DS(ON)
W
0
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1
1.2
ID - Drain Current (A)
V =10V
GS
V =4.5V
GS
R
-On-Resistance
(
)
DS(ON)
W
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