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参数资料
| 型号： | 2N7002WT3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH SINGLE 60V SOT-323 |
| 产品变化通告： | Product Obsolescence 13/Apr/2009 |
| 标准包装： | 10,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 310mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.6 欧姆 @ 500mA，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 0.7nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 24.5pF @ 20V |
| 功率 - 最大： | 280mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-70，SOT-323 |
| 供应商设备封装： | SC-70-3（SOT323） |
| 包装： | 带卷 (TR) |
2N7002W, 2V7002W
Small Signal MOSFET
60 V, 340 mA, Single, N ? Channel, SC ? 70
Features
? ESD Protected
? Low R DS(on)
? Small Footprint Surface Mount Package
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
? 2V Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC ? Q101 Qualified and
PPAP Capable
V (BR)DSS
60 V
http://onsemi.com
R DS(on) MAX
1.6 W @ 10 V
2.5 W @ 4.5 V
I D MAX
(Note 1)
340 mA
Applications
? Low Side Load Switch
? Level Shift Circuits
? DC ? DC Converter
? Portable Applications i.e. DSC, PDA, Cell Phone, etc.
SIMPLIFIED SCHEMATIC
Gate 1
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
3
Drain
Rating
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
Symbol
V DSS
V GS
Value
60
± 20
Unit
V
V
Source
2
(Top View)
Drain Current (Note 1)
Steady State
t<5s
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T A = 85 ° C
I D
310
220
340
240
mA
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain
3
Power Dissipation (Note 1)
Steady State
t<5s
Pulsed Drain Current (t p = 10 m s)
Operating Junction and Storage
Temperature Range
P D
I DM
T J , T STG
280
330
1.4
? 55 to
+150
mW
A
° C
SC ? 70/SOT ? 323
CASE 419
STYLE 8
1
Gate
71 M G
G
2
Source
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
I S
T L
250
260
mA
° C
71 = Device Code
M = Date Code
G = Pb ? Free Package
(Note: Microdot may be in either location)
Gate ? Source ESD Rating ESD 900 V
(HBM, Method 3015)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Junction ? to ? Ambient ? Steady State R q JA 450 ° C/W
(Note 1)
Junction ? to ? Ambient ? t ≤ 5 s (Note 1) R q JA 375
1. Surface ? mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in
sq [1 oz] including traces)
ORDERING INFORMATION
Device Package Shipping ?
2N7002WT1G SC ? 70 3000/Tape & Reel
(Pb ? Free)
2V7002WT1G SC ? 70 3000/Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2012
September, 2012 ? Rev. 5
1
Publication Order Number:
2N7002W/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N7002W-TP | 功能描述:MOSFET SNGL N-CH 60V 115mA RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7002Z | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:300mA, 60V N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 2N7002Z_12 | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:300mA, 60V N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 2N7002ZDW | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:300m Amps, 60 Volts DUAL N-CHANNEL ENHANCEMENT MODE MOSFET |
| 2N7002ZDW_12 | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:300mA, 60V DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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