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参数资料
| 型号： | 2N7081-220M-ISOR1 |
| 厂商： | SEMELAB LTD |
| 元件分类： | JFETs |
| 英文描述： | 11 A, 100 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | HERMETIC SEALED, ISOLATED TO-220, 3 PIN |
| 文件页数： | 2/2页 |
| 文件大小： | 14K |
| 代理商： | 2N7081-220M-ISOR1 |
2N7081–220M–ISO
Semelab plc
Telephone (01455) 556565
Fax (01455) 552612.
E-mail: sales@semelab.co.uk
Web site: http://www.semelab.co.uk
Prelim. 6/98
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS = 0
ID = 250A
VDS = VGS
ID = 250A
VDS = 0
VGS = ±20V
VDS = 80V
VGS = 0
TJ = 125°C
VDS = 10V
VGS = 10V
ID = 7.7A
TJ = 125°C
VDS = 15V
IDS = 7.7A
VGS = 0
VDS = 25V
f = 1MHz
VDD = 50V
ID = 11A
VGEN =10V
RL = 4.1
RG = 7.5
IF =11
VGS = 0
IF = IS
dIF/dt = 100A/s
ELECTRICAL CHARACTERISTICS (T
J = 25°C unless otherwise stated)
Drain – Source Breakdown Voltage
Gate Threshold Voltage
Gate – Body Leakage
Zero Gate Voltage Drain Current
On–State Drain Current
Static Drain – Source On–State
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Continuous Source Current
Pulse Source Current 2
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
100
24
±100
25
250
11
0.12
0.15
0.22
0.27
45
600
190
35
7
45
30
10
12
48
2.5
100
300
0.7
2.8
80
1
V
nA
A
S
pF
ns
A
V
ns
C
K/W
BVDSS
VGS(th)
IDSS
ID(on)
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IS
ISM
VSD
trr
Qrr
RθJC
RθJA
RθCS
STATIC ELECTRICAL RATINGS
DYNAMIC CHARACTERISTICS
SOURCE – DRAIN DIODE CHARACTERISTICS
PACKAGE CHARACTERISTICS
Thermal Resistance Junction – Case
Thermal Resistance Junction – Ambient
Thermal Resistance Case – Sink
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