参数资料
型号: 2N708
厂商: MICROSEMI CORP-LAWRENCE
元件分类: 小信号晶体管
英文描述: 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-206AA
封装: TO-18, 3 PIN
文件页数: 1/2页
文件大小: 52K
代理商: 2N708
TECHNICAL DATA
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/312
Devices
Qualified Level
2N708
JAN, JANTX
MAXIMUM RATINGS
Ratings
Symbol
Value
Units
Collector-Emitter Voltage
VCEO
15
Vdc
Collector-Base Voltage
VCBO
40
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
Collector-Emitter Voltage
VCER
20
Vdc
Total Power Dissipation
@ TA = +25
0C (1)
@ TC = +25
0C (2)
PT
0.36
1.2
W
Operating & Storage Junction Temperature Range
Top, Tstg
-65 to +200
0C
1) Derate linearly 2.06 mW/
0C for TA > 250C
2) Derate linearly 6.90 mW/
0C for TC > 250C
TO-18 (TO-206AA)*
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TA = 25
0C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
IC = 1.0 Adc
V(BR)CBO
40
Vdc
Emitter-Base Breakdown Voltage
IE = 10 Adc
V(BR)EBO
5.0
Vdc
Collector-Emitter Breakdown Voltage
IC = 10 mAdc
V(BR)CEO
15
Vdc
Collector-Emitter Breakdown Voltage
IC = 10 mAdc, RBE
≤ 10
V(BR)CER
20
Vdc
Collector-Base Cutoff Current
VCB = 20 Vdc
ICBO
25
ηAdc
Emitter-Base Cutoff Current
VEB = 4.0 Vdc
IEBO
80
ηAdc
6 Lake Street, Lawrence, MA 01841
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