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参数资料
| 型号： | 2N720A |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18 |
| 封装： | METAL PACKAGE-3 |
| 文件页数： | 2/4页 |
| 文件大小： | 55K |
| 代理商： | 2N720A |
Obsolete
Product(s)
- Obsolete
Product(s)
THERMAL DATA
Rthj-case
Rthj-amb
Thermal Resistance Junction-Case
Max
Thermal Resistance Junction-Ambient
Max
83.3
300
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICBO
Collector Cut-off
Current (IE = 0)
VCB = 90 V
10
nA
V(BR)CBO
Collector-Base
Breakdown Voltage
(IE = 0)
IC = 100
A
120
V
V(BR)CEO
Collector-Emitter
Breakdown Voltage
(IB = 0)
IC = 30 mA
80
V
V(BR)EBO
Emitter-Base
Breakdown Voltage
(IC = 0)
IE = 100
A
7V
IEBO
Emitter Cut-off
Current (IE = 0)
VEB = 5 V
10
nA
VCE(sat)
Collector-Emitter
Saturation Voltage
IC = 50 mA
IB = 5 mA
IC = 150 mA
IB = 15 mA
1.2
5
V
VBE(sat)
Base-Emitter
Saturation Voltage
IC = 50 mA
IB = 5 mA
IC = 150 mA
IB = 15 mA
0.9
1.3
V
hFE
DC Current Gain
IC = 100
A
VCE = 10 V
IC = 10 mA
VCE = 10 V
IC = 150 mA
VCE = 10 V
20
35
40
120
hfe
Small Signal Current
Gain
IC = 50 mA
VCE = 10 V
f = 20 MHz
2.5
CCBO
Collector-Base
Capacitance
IE = 0
VCB = 10 V
f = 1 MHz
15
pF
CEBO
Emitter-Base
Capacitance
IC = 0
VEB = 0.5 V
f = 1 MHz
85
pF
Pulsed: Pulse duration = 300 s, duty cycle ≤ 1 %
2N720A
2/4
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N720A_02 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:EPITAXIAL PLANAR NPN |
| 2N720AJAN | 制造商:Microsemi Corporation 功能描述:Trans GP BJT NPN 80V 0.5A 3-Pin TO-18 制造商:Semicoa Semiconductors 功能描述:Trans GP BJT NPN 80V 0.5A 3-Pin TO-18 制造商:Microsemi 功能描述:Trans GP BJT NPN 80V 0.5A 3-Pin TO-18 |
| 2N720AS | 制造商:SEMICOA 制造商全称:SEMICOA 功能描述:Silicon NPN Transistor |
| 2N721 | 制造商:CENTRAL 制造商全称:Central Semiconductor Corp 功能描述:Small Signal Transistors |
| 2N7218 | 制造商:Microsemi Corporation 功能描述:TRANS MOSFET N-CH 28A 3PIN TO-254 - Bulk |
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