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参数资料
| 型号： | 2N7218 |
| 元件分类： | JFETs |
| 英文描述： | 20 A, 100 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 封装： | HERMETIC SEALED, TO-254AA, 3 PIN |
| 文件页数： | 3/5页 |
| 文件大小： | 61K |
| 代理商： | 2N7218 |
Parameter
Min.
Typ.
Max.
Units
Test Conditions
BV
DSS
Drain-Source
200
V
GS = 0
V, I
D =1.0 mA,
Breakdown Voltage
R
DS(on)
Static Drain-to-Source
-
--
-
0.18
V
GS = 1
0 V, I
D = 11 A
3
On-State Resistance
-
--
-
0.25
V
GS = 1
0 V, I
D = 18 A
3
V
GS(th)
Gate Threshold Voltage
2.0
-
4.0
V
DS
= V
GS,
I
D = 250 A
I
DSS
Zero Gate Voltage Drain
-
--
-
25
A
V
DS = 160 V, VGS = 0V
Current
-
--
-
250
V
DS = 160 V, VGS = 0V, TJ = 125°C
I
GSS
Gate -to-Source Leakage Forward
-
--
-
100
nA
V
GS = 20 V
I
GSS
Gate -to-Source Leakage Reverse
-
--
-
-100
nA
V
GS = -20 V
Q
G(on)
On-state Gate Charge
-
--
-
-60
nC
V
GS = 1
0 V, I
D = 18A
Q
GS
Gate-to-Source Charge
-
--
-
10.6
nC
V
DS = 100 V
Q
Gd
Gate-to-Drain (“Miller”) Charge
-
--
-
37.6
nC
See note 4
t
D(on)
Turn-On Delay Time
-
--
-
-20
ns
V
DD = 100 V, ID = 11A, RG =9.1
t
r
Rise Time
-
--
-
105
ns
See note 4
t
D(off)
Turn-Off Delay Time
-
--
-
-58
ns
t
r
Fall Time
-
--
-
-67
ns
Source-Drain Diode Ratings and Characteristics
Parameter
Min.
Typ.
Max.
Units
Test Conditions
V
SD
Diode Forward Voltage
-
--
-
1.5
V
T
J
= 25°C, I
S
= 18A
3,VGS = 0 V
t
r
Reverse Recovery Time
-
--
-
500
ns
T
J = 25°C, IF= 18A,d
i/dt<100A/s
3
Thermal Resistance
Parameter
Min.
Typ.
Max.
Units
Test Conditions
R
thJC
Junction-to-Case
-
--
-
1.0
Mounting surface flat,
R
thCS
Case-to-sink
-
0.21
-
°C/W
smooth, and greased
R
thJA
Junction-to-Ambient
-
--
-
48
Typical socket mount
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
@V
DD= 50V, Starting TJ = 25°
C,L > 2.1 mH, R
G = 25
, Peak I
L = 18A
3. Pulse width < 300 s; Duty Cycle < 2%
4. See MIL-S-19500/596
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
Parameter
JANTXV, JANTX, 2N7219
Units
I
D @
V
GS = 10V, TC = 25°C
Continuous Drain Current
18
A
I
D @
V
GS = 10V, TC = 100°C
Continuous Drain Current
11
A
I
DM
Pulsed Drain Current
1
72
A
P
D @
T
C = 25°C
Maximum Power Dissipation
125
W
Linear Derating Factor
1.0
W/°C
V
GS
Gate-Source Voltage
± 20
V
E
AS
Single Pulse Avalanche Energy
2
450
4
mJ
I
AR
Avalanche Current
1
18
4
A
E
AR
Repetitive Avalanche Energy
1
12.5
4
mJ
TJ
Operating Junction
-55 to 150
°C
TSTG
Storage Temperature Range
Lead Temperature
300(.06 from case for 10 sec)
°C
ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified)
ABSOLUTE MAXIMUM RATINGS (T
C = 25°C unless otherwise noted
2N7218, JANTX2N7218, JANTXV2N7218
2N7221, JANTX2N7221, JANTXV2N7221
2N7219, JANTX2N7219, JANTXV2N7219
2N7222, JANTX2N7222, JANTXV2N7222
相关PDF资料 |
PDF描述 |
|---|---|
| 2N7221 | 6 A, 400 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 2N7222 | 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 2N7227 | 14 A, 400 V, 0.315 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 2N7219 | 18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 2N7224 | 34 A, 100 V, 0.081 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N7218UJANTXV | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 28A 3-Pin SMD-1 |
| 2N7219 | 制造商:Microsemi Corporation 功能描述:TRANS MOSFET N-CH 18A 3PIN TO-254 - Bulk |
| 2N7219JANTX | 制造商:International Rectifier 功能描述: |
| 2N7219UJANTX | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 200V 18A 3-Pin SMD-1 |
| 2N7219UJANTXV | 制造商:International Rectifier 功能描述: |
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