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参数资料
| 型号： | 2N7225S |
| 厂商： | SENSITRON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 27.4 A, 200 V, 0.105 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 封装： | HERMETIC SEALED, TO-254, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 35K |
| 代理商： | 2N7225S |
221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798
World Wide Web Site - www.sensitron.com E-Mail Address - sales@sensitron.com
2N7225
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 271, REV. A
HERMETIC POWER MOSFET
N-CHANNEL
DESCRIPTION: 200 VOLT, 0.105 OHM, 27.4 A MOSFET IN A HERMETIC TO-254 PACKAGE.
(add suffix S for up-screening to JTX Level – 2N7225S)
MAXIMUM RATINGS
ALL RATINGS ARE AT T
A
= 25
°C UNLESS OTHERWISE SPECIFIED.
RATING
SYMBOL
MIN.
TYP.
MAX.
UNITS
GATE TO SOURCE VOLTAGE
VGS
-
±20
Volts
CONTINUOUS DRAIN CURRENT
VGS=10V, TC = 25°C
VGS=10V, TC = 100°C
ID
-
27.4
17
Amps
PULSED DRAIN CURRENT
@ TC = 25°C
IDM
-
110
Amps
OPERATING AND STORAGE TEMPERATURE
TOP/TSTG
-55
-
150
°C
TERMAL RESISTANCE JUNCTION TO CASE
RθJC
-
0.83
°C/W
TOTAL DEVICE DISSIPATION @ TC = 25°C
PD
-
150
Watts
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
VGS = 0V, ID = 1.0mA
BVDSS
200
-
Volts
DRAIN TO SOURCE ON STATE RESISTANCE
VGS = 10V, ID = 17A
VGS = 10V, ID = 27.4A
RDS(ON)
-
0.100
0.105
Ω
GATE THRESHOLD VOLTAGE
VDS = VGS, ID =
250
μA
VGS(th)
2.0
-
4.0
Volts
FORWARD TRANSCONDUCTANCE
VDS ≥ 15V, IDS = 17A
gfs
9.0
-
S(1/
Ω)
ZERO GATE VOLTAGE DRAIN CURRENT
VDS = 0.8xMax. Rating, VGS = 0V
VDS = 0.8xMax. Rating
VGS = 0V, TJ = 125°C
IDSS
-
25
250
μA
GATE TO SOURCE LEAKAGE FORWARD
@ RATED
GATE TO SOURCE LEAKAGE REVERSE
VGS
IGSS
-
100
-100
nA
TOTAL GATE CHARGE
VGS = 10 VOLTS
GATE TO SOURCE CHARGE
50% RATED
VDS
GATE TO DRAIN CHARGE
RATED ID
Qg
Qgs
Qgd
55
8.0
30
-
115
22
60
nC
TURN ON DELAY TIME
VDD = 100V
RISE TIME
RATED ID
TURN OFF DELAY TIME
RG = 2.35Ω
FALL TIME
td(ON)
tr
td(ON)
tf
-
35
190
170
130
nsec
DIODE FORWARD VOLTAGE
TJ = 25°C, IS =
27.4A,
VGS = 0V
VSD
-
1.9
Volts
DIODE REVERSE RECOVERY TIME
TJ = 25°C
REVERSE RECOVERY CHARGE
If = RATED ID
di/dt =
100A/sec
trr
Qrr
-
950
9.0
nsec
μC
INPUT CAPACITANCE
VGS = 0 VOLTS
OUTPUT CAPACITANCE
VDS = 25 VOLTS
Ciss
Coss
-
3500
700
-
pF
相关PDF资料 |
PDF描述 |
|---|---|
| 2N7225 | 27.4 A, 200 V, 0.105 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 2N7227 | 14 A, 400 V, 0.315 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 2N7228 | 12 A, 500 V, 0.415 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| APT10057WVR | 17.3 A, 1000 V, 0.57 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-267 |
| APT20M42HVR | 50 A, 200 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N7225U | 制造商:Microsemi Corporation 功能描述:MOSFET N-CH 200V SMD1 |
| 2N7225U1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 27.4A I(D) | SMT |
| 2N7225UJANTXV | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 200V 27.4A 3-Pin SMD-1 |
| 2N7227 | 制造商:Microsemi Corporation 功能描述:TRANS MOSFET N-CH 400V 14A 3PIN TO-254 - Bulk 制造商:Microsemi Corporation 功能描述:MOSFET N-CH 400V TO-254AA |
| 2N7227_10 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:N-CHANNEL MOSFET |
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