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参数资料
| 型号： | 2N7225U1R4 |
| 厂商： | SEMELAB LTD |
| 元件分类： | JFETs |
| 英文描述： | 27.4 A, 200 V, 0.105 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-276AB |
| 封装： | HERMETIC SEALED, SMD1, 3 PIN |
| 文件页数： | 2/2页 |
| 文件大小： | 22K |
| 代理商： | 2N7225U1R4 |
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
IRFN250
2N7225U1
Document Number 3352
Issue 2
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
VGS = 0
ID = 1mA
Reference to 25°C
ID = 1mA
VGS = 10V
ID = 17A
VGS = 10V
ID = 27.4A
VDS = VGS
ID = 250A
VDS ≥ 15V
IDS = 17A
VGS = 0
VDS = 0.8BVDSS
TJ = 125°C
VGS = 20V
VGS = –20V
VGS = 0
VDS = 25V
f = 1MHz
VGS = 10V
ID = 22A
VDS = 0.5BVDSS
ID = 22A
VDS = 0.5BVDSS
VDD = 100V
VGS = 10V
ID = 27.4A
RG = 2.35
IS = 27.4A
TJ = 25°C
VGS = 0
IF = 27.4A
TJ = 25°C
di / dt ≤ 100A/sVDD ≤ 30V
ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated)
Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On–State
Resistance 1
Gate Threshold Voltage
Forward Transconductance 1
Zero Gate Voltage Drain Current
Forward Gate – Source Leakage
Reverse Gate – Source Leakage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 1
Gate – Source Charge 1
Gate – Drain (“Miller”) Charge 1
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Continuous Source Current
Pulse Source Current 2
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn–On Time
200
0.29
0.100
0.105
24
9
25
250
100
–100
3500
700
110
55
115
822
30
60
35
190
170
130
27.4
110
1.9
950
9.0
Negligible
V
V/°C
V
S(
A
nA
pF
nC
ns
A
V
ns
C
BVDSS
BV
DSS
T
J
RDS(on)
VGS(th)
gfs
IDSS
IGSS
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
IS
ISM
VSD
trr
Qrr
ton
STATIC ELECTRICAL RATINGS
Notes
1) Pulse Test: Pulse Width
≤ 300ms, δ≤ 2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
DYNAMIC CHARACTERISTICS
SOURCE – DRAIN DIODE CHARACTERISTICS
(
)
相关PDF资料 |
PDF描述 |
|---|---|
| 2N7225U1-JQR-B | 27.4 A, 200 V, 0.105 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-276AB |
| 2N7227TX | 14 A, 400 V, 0.315 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 2N7228TXV | 12 A, 500 V, 0.415 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 2N7225TXV | 27.4 A, 200 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 2N7227TXV | 14 A, 400 V, 0.315 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N7225UJANTXV | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 200V 27.4A 3-Pin SMD-1 |
| 2N7227 | 制造商:Microsemi Corporation 功能描述:TRANS MOSFET N-CH 400V 14A 3PIN TO-254 - Bulk 制造商:Microsemi Corporation 功能描述:MOSFET N-CH 400V TO-254AA |
| 2N7227_10 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:N-CHANNEL MOSFET |
| 2N72271N6036 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507 |
| 2N72271N6036A | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507 |
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