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| 型号： | 2N7261 |
| 厂商： | MICROSEMI CORP-LAWRENCE |
| 元件分类： | JFETs |
| 英文描述： | 8 A, 100 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 封装： | MODIFIED TO-39, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 284K |
| 代理商： | 2N7261 |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED N-CHANNEL MOSFET
Reference MIL-PRF-19500/601
T4-LDS-0119 Rev. 2 (101017)
Page 1 of 5
DEVICES
LEVELS
2N7261
2N7261U
JANSR (100K RAD(Si))
JANSF (300K RAD(Si))
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Unit
Drain – Source Voltage
VDS
100
Vdc
Gate – Source Voltage
VGS
± 20
Vdc
Continuous Drain Current
TC = +25°C
ID1
8.0
Adc
Continuous Drain Current
TC = +100°C
ID2
5.0
Adc
Max. Power Dissipation
Ptl
25 (1)
W
Drain to Source On State Resistance
Rds(on)
0.180 (2)
Ω
Operating & Storage Temperature
Top, Tstg
-55 to +150
°C
Note: (1) Derated Linearly by 0.2 W/°C for TC > +25°C
(2) VGS = 12Vdc, ID = 5.0A
PRE-IRRADIATION ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise
noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Drain-Source Breakdown Voltage
VGS = 0V, ID = 1mAdc
V(BR)DSS
100
Vdc
Gate-Source Voltage (Threshold)
VDS ≥ VGS, ID = 1.0mA
VDS ≥ VGS, ID = 1.0mA, Tj = +125°C
VDS ≥ VGS, ID = 1.0mA, Tj = -55°C
VGS(th)1
VGS(th)2
VGS(th)3
2.0
1.0
4.0
5.0
Vdc
Gate Current
VGS = ±20V, VDS = 0V
VGS = ±20V, VDS = 0V, Tj = +125°C
IGSS1
IGSS2
±100
±200
nAdc
Drain Current
VGS = 0V, VDS = 80V
VGS = 0V, VDS = 100V, Tj = +125°C
VGS = 0V, VDS = 80V, Tj = +125°C
IDSS1
IDSS2
IDSS3
25
1.0
0.25
Adc
mAdc
Static Drain-Source On-State Resistance
VGS = 12V, ID = 5.0A pulsed
VGS = 12V, ID = 8.0A pulsed
Tj = +125°C
VGS = 12V, ID = 5.0A pulsed
rDS(on)1
rDS(on)2
rDS(on)3
0.180
0.185
0.35
Ω
Diode Forward Voltage
VGS = 0V, ID = 8.0A pulsed
VSD
1.5
Vdc
TO-205AF
(modified TO-39)
JANSR2N7261, JANSF2N7261
See Figure 1
18 PIN LEADLESS CHIP CARRIER
JANSR2N7261U, JANSF2N7261U
See Figure 2
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