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参数资料
| 型号： | 2N7274H |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 8 A, 200 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 文件页数： | 1/7页 |
| 文件大小： | 80K |
| 代理商： | 2N7274H |
2001 Fairchild Semiconductor Corporation
2N7274D, 2N7274R, 2N7274H Rev. A
2N7274D, 2N7274R
2N7274H
Radiation Hardened
N-Channel Power MOSFETs
Package
TO-204AA
Symbol
D
G
S
Features
8A, 200V, RDS(on) = 0.50
Second Generation Rad Hard MOSFET Results From New Design Concepts
Gamma
- Meets Pre-Rad Specications to 100KRAD(Si)
- Dened End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
- Performance Permits Limited Use to 3000KRAD(Si)
Gamma Dot
- Survives 3E9RAD(Si)/sec at 80% BVDSS Typically
- Survives 2E12 Typically If Current Limited to IDM
Photo Current
- 3.0nA Per-RAD(Si)/sec Typically
Neutron
- Pre-RAD Specications for 1E13 Neutrons/cm2
- Usable to 1E14 Neutrons/cm2
Single Event
- Typically Survives 1E5ions/cm2 Having an
LET
≤ 35MeV/mg/cm2 and a Range ≥ 30m at 80% BVDSS
Description
The Harris Semiconductor Sector has designed a series of SECOND GENERA-
TION hardened power MOSFETs of both N and P channel enhancement types
with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25m
.
Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron
hardness ranging from 1E13n/cm2 for 500V product to 1E14n/cm2 for 100V prod-
uct. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current lim-
iting and 2E12 with current limiting. Heavy ion survival from signal event drain
burn-out exists for linear energy transfer (LET) of 35 at 80% of rated voltage.
This MOSFET is an enhancement-mode silicon-gate power eld effect transistor of
the vertical DMOS (VDMOS) structure. It is specially designed and processed to
exhibit minimal characteristic changes to total dose (GAMMA) and neutron (no)
exposures. Design and processing efforts are also directed to enhance survival to
heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.
This part may be supplied as a die or in various packages other than shown above.
Reliability screening is available as either non TX (commercial), TX equivalent of
MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of MIL-S-
19500. Contact the Harris Semiconductor High-Reliability Marketing group for any
desired deviations from the data sheet.
REGISTRATION PENDING
Currently Available as FRM230 (D, R, H)
March 2001
Absolute Maximum Ratings (TC = +25oC) Unless Otherwise Specied
2N7274D, R, H
UNITS
Drain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
200
V
Drain-Gate Voltage (RGS = 20k
). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
200
V
Continuous Drain Current
TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
8
5
A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
24
A
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
±20
V
Maximum Power Dissipation
TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
Derated Above +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
75
30
0.60
W
W/oC
Inductive Current, Clamped, L = 100
H, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . . . . . . ILM
24
A
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IS
8
A
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM
24
A
Operating And Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG
-55 to +150
oC
Lead Temperature (During Soldering)
Distance > 0.063 in. (1.6mm) From Case, 10s Max . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
300
oC
相关PDF资料 |
PDF描述 |
|---|---|
| 2N7285D3 | 16 A, 200 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 2N7285R1 | 16 A, 200 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 2N7285R3 | 16 A, 200 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 2N7285H4 | 16 A, 200 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 2N7285D4 | 16 A, 200 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N7274R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 8A I(D) | TO-204AA |
| 2N7275D1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 5A I(D) | TO-205AF |
| 2N7275D2 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 5A I(D) | TO-205AF |
| 2N7275D3 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 5A I(D) | TO-205AF |
| 2N7275H1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 5A I(D) | TO-205AF |
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