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参数资料
| 型号： | 2N7369 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 80 V, PNP, Si, POWER TRANSISTOR, TO-254AA |
| 封装： | TO-254, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 27K |
| 代理商： | 2N7369 |
6 Lake Street, Lawrence, MA 01841
3/98 REV: A
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 1 of 2
MAXIMUM RATINGS
Ratings
Symbol
Value
Units
Collector-Emitter Voltage
VCEO
80
Vdc
Collector-Base Voltage
VCBO
80
Vdc
Emitter-Base Voltage
VEBO
7.0
Vdc
Base Current
IB
4.0
Adc
Collector Current
IC
10
Adc
Total Power Dissipation @ TC = 25
0C (1)
PT
115
W
Operating & Storage Junction Temperature Range
TJ, Tstg
-65 to +200
0C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
Thermal Resistance, Junction-to-Case
RθJC
1.5
0C/W
1)
Derate linearly 0.657 W/
0C for TC > 250C
ELECTRICAL CHARACTERISTICS (TC = 25
0C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 0.2 Adc
VCEO(sus)
80
Vdc
Collector-Emitter Cutoff Current
VCE = 70 Vdc
ICES
5.0
mAdc
Collector-Emitter Cutoff Current
VCE = 80 Vdc, VBE = 1.5 Vdc
ICEX
5.0
mAdc
Emitter-Base Cutoff Current
VEB = 7.0 Vdc
IEBO
5.0
mAdc
TECHNICAL DATA
2N7369 JAN, JTX, JTXV
Processed per MIL-PRF-19500/621
PNP HIGH-POWER SILICON TRANSISTOR
TO-254
MIL-PRF
QPL
DEVICES
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PDF描述 |
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| 2N7370 | 12 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-254AA |
| 2N7381 | 9.4 A, 200 V, 0.49 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA |
| 2N744 | Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-18 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N7369JAN | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:PNP HIGH POWER SILICON TRANSISTOR |
| 2N7369JANTX | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:PNP HIGH POWER SILICON TRANSISTOR |
| 2N7369JANTXV | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:PNP HIGH POWER SILICON TRANSISTOR |
| 2N736A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 100MA I(C) | TO-18 |
| 2N736B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 100MA I(C) | TO-18 |
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