- 您现在的位置：买卖IC网 > PDF目录33300 > 2N7381 (MICROSEMI CORP-LAWRENCE) 9.4 A, 200 V, 0.49 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA PDF资料下载
参数资料
| 型号： | 2N7381 |
| 厂商： | MICROSEMI CORP-LAWRENCE |
| 元件分类： | JFETs |
| 英文描述： | 9.4 A, 200 V, 0.49 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA |
| 封装： | TO-257AA, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 149K |
| 代理商： | 2N7381 |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED N-CHANNEL MOSFET
Reference MIL-PRF-19500/614
T4-LDS-0124 Rev. 1 (091145)
Page 2 of 4
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Gate Charge:
On-State Gate Charge
Gate to Source Charge
Gate to Drain Charge
VGS = 12V, ID = 9.4A
VDS = 100V
Qg(on)
Qgs
Qgd
50
10
25
nC
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Switching time tests:
Turn-on delay time
Rinse time
Turn-off delay time
Fall time
ID = 9.4A, VGS = 12Vdc,
Gate drive impedance = 7.5
Ω,
VDD = 100Vdc
td(on)
tr
td(off)
tf
25
50
70
60
ns
Diode Reverse Recovery Time
di/dt ≤ 100A/s, VDD ≤ 30V,
IF = 9.4A
trr
460
ns
POST-IRRADIATION ELECTRICAL CHARACTERISTICS (3) (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Drain-Source Breakdown Voltage
VGS = 0V, ID = 1mAdc
V(BR)DSS
200
Vdc
Gate-Source Voltage (Threshold)
VDS ≥ VGS, ID = 1.0mA MSR
VDS ≥ VGS, ID = 1.0mA MSF
VGS(th)1
2.0
1.25
4.0
4.5
Vdc
Gate Current
VGS = ±20V, VDS = 0V
IGSS1
±100
nAdc
Drain Current
VGS = 0V, VDS = 160V MSR
VGS = 0V, VDS = 160V MSF
IDSS1
25
50
Adc
Static Drain-Source On-State Voltage
VGS = 12V, ID = 6.0A pulsed MSR
VGS = 12V, ID = 6.0A pulsed MSF
VDS(on)
2.4
3.18
Vdc
Diode Forward Voltage
VGS = 0V, ID = 9.4A pulsed
VSD
1.4
Vdc
NOTE:
(3) Post-Irradiation Electrical Characteristics apply to devices subjected to Steady State Total Dose Irradiation testing in
accordance with MIL-STD-750 Method 1019. Separate samples are tested for VGS bias (12V), and VDS bias
(160V) conditions.
相关PDF资料 |
PDF描述 |
|---|---|
| 2N744 | Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-18 |
| 2N744 | Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-18 |
| 2N743 | Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-18 |
| 2N757A | 100 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2N0720A | 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N739 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 50MA I(C) | TO-18 |
| 2N7395 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 8A I(D) | TO-205AF |
| 2N7396 | 制造商: 功能描述: 制造商:undefined 功能描述: |
| 2N7398 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2A I(D) | TO-205AF |
| 2N740 | 制造商:NJSEMI 制造商全称:New Jersey Semi-Conductor Products, Inc. 功能描述:SI NPN LO-PWR BJT |
发布紧急采购，3分钟左右您将得到回复。