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参数资料
| 型号： | 2N7608T2 |
| 元件分类： | JFETs |
| 英文描述： | 6 A, 100 V, 0.32 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 封装： | HERMETIC SEALED, MODIFIED TO-39, 3 PIN |
| 文件页数： | 9/9页 |
| 文件大小： | 209K |
| 代理商： | 2N7608T2 |
www.irf.com
9
Pre-Irradiation
IRHLF77110, 2N7608T2
Pulse width ≤ 300 s; Duty Cycle ≤ 2%
Total Dose Irradiation with VGS Bias.
10 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Total Dose Irradiation with VDS Bias.
80 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = 25V, starting TJ = 25°C, L= 2.05 mH
Peak IL = 6.0A, VGS = 10V
ISD ≤ 6.0A, di/dt ≤ 190A/s,
VDD ≤ 100V, TJ ≤ 150°C
Footnotes:
Case Outline and Dimensions — TO-205AF (Modified TO-39)
LEGEND
1- SOURCE
2- GATE
3- DRAIN
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Data and specifications subject to change without notice. 10/2010
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