参数资料
型号: 2N918UB
厂商: MICROSEMI CORP-LAWRENCE
元件分类: 小信号晶体管
英文描述: SMALL SIGNAL TRANSISTOR
文件页数: 2/2页
文件大小: 97K
代理商: 2N918UB
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/301
T4-LDS-0010 Rev. 1 (072019)
Page 2 of 2
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Magnitude of Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 4mAdc, VCE = 10Vdc, f = 100MHz
|hfe|
6.0
18
Output Capacitance
VCB = 0Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz
VCB = 10Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz
Cobo1
Cobo2
3.0
1.7
pF
Input Capacitance
VEB = 0.5Vdc, IC = 0, 100kHz ≤ f ≤ 1.0MHz
Cibo
1.7
pF
Noise Figure (1)
VCE = 6V, IC = 1.0mA, f = 60MHz
gs = 2.5mmho
NF
6.0
dB
Small-Signal Power Gain (1)
VCB = 12V, IC = 6.0mA, f = 200MHz
Gpe
15
dB
Collector-Base Time Constant (1)
VCB = 10V, IE = -4.0mA, f = 79.8MHz
Rb’CC
25
ps
Oscillator Power Output (1)
VCB = 1.5V, IC = 8.0mA, f ≥ 500MHz
Po
30
mW
Collector Efficiency
VCB = 15V, IC = 8.0mA, f > 500MHz
n
25
%
NOTES:
(1) For more detail see MIL-PRF-19500/301
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