参数资料
型号: 2N918UBJS
厂商: MICROSEMI CORP
元件分类: 小信号晶体管
英文描述: Si, NPN, RF SMALL SIGNAL TRANSISTOR
封装: HERMETIC SEALED, CERAMIC, CERSOT PACKAGE
文件页数: 1/2页
文件大小: 101K
代理商: 2N918UBJS
2N918UB
Silicon NPN Transistor
Dat a Sheet
Description
Semicoa Semiconductors offers:
Screening and processing per MIL-PRF-19500 Appendix E
JAN level (2N918UBJ)
JANTX level (2N918UBJX)
JANTXV level (2N918UBJV)
JANS level (2N918UBJS)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
Ultra-high frequency transistor
Low power
NPN silicon transistor
Features
Hermetically sealed Cersot ceramic
Also available in chip configuration
Chip geometry 0003
Reference document:
MIL-PRF-19500/301
Benefits
Qualification Levels: JAN, JANTX,
JANTXV and JANS
Radiation testing available
Absolute Maximum Ratings
TC = 25°C unless otherwise specified
Parameter
Symbol
Rating
Unit
Collector-Emitter Voltage
VCEO
15
Volts
Collector-Base Voltage
VCBO
30
Volts
Emitter-Base Voltage
VEBO
3
Volts
Collector Current, Continuous
IC
50
mA
Power Dissipation, TA = 25°C
Derate linearly above 25
°C
PT
200
1.14
mW
mW/
°C
Operating Junction Temperature
Storage Temperature
TJ
TSTG
-65 to +200
°C
Copyright
2004
Semicoa
Rev. F.2
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
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2N918UBJS Si, NPN, RF SMALL SIGNAL TRANSISTOR
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