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参数资料
| 型号： | 2PB710ARL/DG |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 3/9页 |
| 文件大小： | 57K |
| 代理商： | 2PB710ARL/DG |
2PB710AXL_1
NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 29 October 2008
3 of 9
NXP Semiconductors
2PB710ARL; 2PB710ASL
50 V, 500 mA PNP general-purpose transistors
5.
Limiting values
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6.
Thermal characteristics
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7.
Characteristics
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage
open emitter
-
60
V
VCEO
collector-emitter voltage
open base
-
50
V
VEBO
emitter-base voltage
open collector
-
5V
IC
collector current
-
500
mA
ICM
peak collector current
single pulse;
tp ≤ 1ms
-
1A
IBM
peak base current
single pulse;
tp ≤ 1ms
-
200
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
[1] -
250
mW
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
55
+150
°C
Tstg
storage temperature
65
+150
°C
Table 7.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-a)
thermal resistance from junction
to ambient
in free air
[1] -
-
500
K/W
Table 8.
Characteristics
Tamb =25 °C unless otherwise specied.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ICBO
collector-base cut-off
current
VCB = 60 V; IE =0A
-
10
nA
VCB = 60 V; IE =0A;
Tj = 150 °C
--
5
A
IEBO
emitter-base cut-off current VEB = 5 V; IC =0A
-
10
nA
hFE
DC current gain
VCE = 10 V;
IC = 500 mA
[1] 40
-
hFE group R
VCE = 10 V;
IC = 150 mA
[1] 120
-
240
hFE group S
VCE = 10 V;
IC = 150 mA
[1] 170
-
340
VCEsat
collector-emitter saturation
voltage
IC = 300 mA;
IB = 30 mA
[1] --
600 mV
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2PB710AS | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:PNP general purpose transistor |
| 2PB710AS,115 | 功能描述:两极晶体管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2PB710ASL | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:50 V, 500 mA PNP general-purpose transistors |
| 2PB710ASL,215 | 功能描述:两极晶体管 - BJT 50V 500MA PNP GEN-PURPOSE TRAN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2PB710ASL,235 | 功能描述:两极晶体管 - BJT Trans GP BJT PNP 50V 0.5A 3-Pin RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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