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参数资料
| 型号： | 2PB710AT/R |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 文件页数： | 3/8页 |
| 文件大小： | 47K |
| 代理商： | 2PB710AT/R |
1999 May 31
3
Philips Semiconductors
Product specication
PNP general purpose transistor
2PB710A
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
Note
1. Pulse test: tp ≤ 300 s; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 60 V
10
nA
IE = 0; VCB = 60 V; Tj = 150 °C
5
A
IEBO
emitter cut-off current
IC = 0; VEB = 5V
10
nA
hFE
DC current gain
IC = 150 mA; VCE = 10 V; note 1
2PB710AQ
85
170
2PB710AR
120
240
2PB710AS
170
340
DC current gain
IC = 500 mA; VCE = 10 V; note 1
40
VCEsat
collector-emitter saturation voltage IC = 300 mA; IB = 30 mA; note 1
600
mV
VBEsat
base-emitter saturation voltage
IC = 300 mA; IB = 30 mA; note 1
1.5
V
Cc
collector capacitance
IE =ie = 0; VCB = 10 V; f = 1 MHz
15
pF
fT
transition frequency
IC = 50 mA; VCE = 10 V;
f = 100 MHz; note 1
2PB710AQ
100
MHz
2PB710AR
120
MHz
2PB710AS
140
MHz
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