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参数资料
| 型号： | 2PC4617QJ |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC, SC-89, 3 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 44K |
| 代理商： | 2PC4617QJ |
2001 Aug 03
2
Philips Semiconductors
Product specication
NPN general purpose transistor
2PC4617J
FEATURES
Power dissipation comparable to SOT23
Low output capacitance
Low saturation voltage VCEsat
Low current (max. 100 mA)
Low voltage (max. 50 V).
APPLICATIONS
General purpose switching and amplification in
miniaturized application areas such as telecom and
multimedia.
DESCRIPTION
NPN transistor encapsulated in an ultra small plastic
SMD SC-89 (SOT490) package.
PNP complement: 2PA1774J.
MARKING
PINNING
TYPE NUMBER
MARKING CODE
2PC4617QJ
ZQ
2PC4617RJ
ZR
2PC4617SJ
ZS
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1
Simplified outline (SC-89; SOT490) and
symbol.
handbook, halfpage
MAM410
1
2
3
12
Top view
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Refer to SC-89 (SOT490) standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
50
V
VCEO
collector-emitter voltage
open base
50
V
VEBO
emitter-base voltage
open collector
5V
IC
collector current (DC)
100
mA
ICM
peak collector current
200
mA
IBM
peak base current
200
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
250
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2PC4617QJ,115 | 功能描述:两极晶体管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2PC4617QM | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:NPN general purpose transistors |
| 2PC4617QM T/R | 功能描述:两极晶体管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2PC4617QM,315 | 功能描述:两极晶体管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2PC4617QMB | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN50V 0.1A SOT88 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN,50V 0.1A, SOT883B 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN,50V 0.1A, SOT883B; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:120; Operating Temperature Min:-55C; Operating ;RoHS Compliant: Yes |
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