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参数资料
| 型号： | 2PD1820AST/R |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC, SC-70, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 101K |
| 代理商： | 2PD1820AST/R |
1999 Apr 12
2
NXP Semiconductors
Product data sheet
NPN general purpose transistor
2PD1820A
FEATURES
High current (max. 500 mA)
Low voltage (max. 50 V)
Low collector-emitter saturation voltage (max. 600 mV).
APPLICATIONS
General purpose switching and amplification, especially
for portable equipment.
DESCRIPTION
NPN transistor in an SC-70; SOT323 plastic package.
PNP complement: 2PB1219A.
MARKING
Note
1.
= - : Made in Hong Kong.
= t : Made in Malaysia.
PINNING
TYPE NUMBER
MARKING CODE(1)
2PD1820AQ
A
Q
2PD1820AR
A
R
2PD1820AS
A
S
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1
Simplified outline (SC-70; SOT323) and
symbol.
handbook, halfpage
MAM336
Top view
2
1
3
2
3
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
60
V
VCEO
collector-emitter voltage
open base
50
V
VEBO
emitter-base voltage
open collector
5
V
IC
collector current (DC)
500
mA
ICM
peak collector current
1
A
IBM
peak base current
200
mA
Ptot
total power dissipation
200
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
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