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参数资料
| 型号： | 2PG009 |
| 厂商： | PANASONIC CORP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 40 A, 510 V, N-CHANNEL IGBT, TO-220AB |
| 封装： | ROHS COMPLIANT, TO-220D-A1, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 400K |
| 代理商： | 2PG009 |
IGBT
Publication date: February 2009
SJN00007AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2PG009
Silicon N-channel enhancement IGBT
For plasma display panel drive
For high speed switching circuits
Features
Low collector-emitter saturation voltage: VCE(sat)< 2.5 V
High-speed switching: tf = 185 ns (typ.)
Absolute Maximum Ratings TC = 25°C
Parameter
Symbol
Rating
Unit
Collector-emitter voltage (E-B short)
VCES
510
V
Gate-emitter voltage (E-B short)
VGES
–30 to +35
V
Collector current
IC
40
A
Peak collector current *
ICP
230
A
Power dissipation
PC
40
W
Ta = 25°C
2.0
W
Junction temperature
Tj
150
°
C
Storage temperature
Tstg
–55 to +150
°
C
Note) *: Assurance of repetitive pulse. (Repetitive period ≤ 5 ms on-duty ≤ 20%)
But, it must stay within 40% of all that the time impressed pulse repetitively.
T ≤ 5.0 s, On-duty ≤ 20%
Electrical Characteristics TC = 25°C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (E-B short)
VCES
IC = 1 mA, VGE = 0
510
V
Collector-emitter cutoff current (E-B short) *
ICES
VCE = 408 V, VGE = 0
5.0
m
A
Gate-emitter cutoff current (E-B short)
IGES
VGE = ±35 V, –30 V, VCE = 0
±
1.0
m
A
Gate-emitter threshold voltage
VGE(th) VCE = 10 V, IC = 1.0 mA
3.0
5.5
V
Collector-emitter saturation voltage
VCE(sat) VGE = 15 V, IC = 40 A
1.95
2.5
V
Collector-emitter reverse break down voltage
–VCE
IC = –100 mA, VGE = 15 V
18
22.5
V
Short-circuit input capacitance (Common emitter)
Cies
VCE = 25 V, VGE = 0, f = 1 MHz
1210
pF
Short-circuit output capacitance (Common emitter)
Coes
125
pF
Reverse transfer capacitance (Common emitter)
Cres
21
pF
Gate charge load
Qg
VCC = 250 V, IC = 40 A, VGE = 15 V
51
nC
Gate-emitter charge
Qge
9
nC
Gate-collector charge
Qgc
20
nC
Turn-on delay time
td(on)
VCC = 250 V, IC = 40 A,
RL ≈ 6.25 , VGE = 15 V
75
ns
Rise time
tr
610
ns
Turn-off delay time
td(off)
200
ns
Fall time
tf
185
300
ns
Thermal resistance (ch-c)
Rth(ch-c)
3.13
°
C/W
Thermal resistance (ch-a)
Rth(j-a)
63
°
C/W
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Package
Code
TO-220D-A1
Marking Symbol: 2PG009
Pin Name
1. Gate
2. Collector
3. Emitter
Internal Connection
G
C
E
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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