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参数资料
| 型号： | 2SA0879R |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 70 mA, 200 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | ROHS COMPLIANT, SC-51, TO-92L-A1, 3 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 249K |
| 代理商： | 2SA0879R |
1995
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2275
DESCRIPTION
The 2SK2275 is N-channel Power MOS Field Effect Transis-
tor designed for high voltage switching applications.
FEATURES
Low On-state Resistance
RDS(on) = 2.8
MAX. (VGS = 10 V, ID = 2.0 A)
LOW Ciss
Ciss = 1 000 pF TYP.
High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Drain to Source Voltage
VDSS
900
V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
ID (DC)
±3.5
A
Drain Current (pulse)
ID (pulse)*
±14
A
Total Power Dissipation (TC = 25
°C) PT1
35
W
Total Power Dissipation (Ta = 25
°C) PT2
2.0
W
Storage Temperature
Tstg
–55 to +150
°C
Channel Temperature
Tch
150
°C
Single Avalanche Current
IAS**
3.5
A
Single Avalanche Energy
EAS**
22
mJ
*PW
≤ 10
s, Duty Cycle ≤ 1%
**Starting Tch = 25
°C, RG = 25 , VGS = 20 V → 0
The diode connected between the gate and source of the
transistor serves as a protector against ESD. When this device
is actually used, an additional protection circuit is externally
required if a voltage exceeding the rated voltage may be
applied to this device.
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No.
TC-2510
(O.D. No.
TC–8069)
Date Published
February 1995 P
Printed in Japan
10.0 ± 0.3
φ3.2 ± 0.2
4.5 ± 0.2
2.7 ± 0.2
2.5 ± 0.1
0.65 ± 0.1
1.5 ± 0.2
2.54 TYP.
1.3 ± 0.2
2.54 TYP.
0.7 ± 0.1
4
±
0.2
15.0
±
0.3
12.0
±
0.2
3
±
0.1
12 3
1. Gate
2. Drain
3. Source
13.5
MIN.
Body diode
Source (S)
Drain (D)
Gate (G)
12 3
PACKAGE DIMENSIONS
(in millimeters)
MP-45F (ISOLATED TO-220)
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相关代理商/技术参数 |
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|---|---|
| 2SA0885 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type |
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| 2SA08850R | 功能描述:TRANS PNP HF 35VCEO 1A TO-126 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SA0885Q | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 1A I(C) | TO-126 |
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