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参数资料
| 型号： | 2SA0885 |
| 英文描述： | Power Device - Power Transistors - Others |
| 中文描述： | 功率器件-功率晶体管-其他 |
| 文件页数： | 1/3页 |
| 文件大小： | 81K |
| 代理商： | 2SA0885 |
Transistors
1
Publication date: March 2003
SJC00005BED
2SA0838 (2SA838)
Silicon PNP epitaxial planar type
For low-frequency amplification
Complementary to 2SC1359
■ Features
High transfer ratio f
T
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
30
V
Collector-emitter voltage (Base open)
VCEO
20
V
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
30
mA
Collector power dissipation
PC
250
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Base-emitter saturation voltage
VBE
VCE
= 10 V, I
C
= 1 mA
0.7
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 10 V, IE = 0
0.1
A
Collector-emitter cutoff current (Base open)
ICEO
VCE = 20 V, IB = 0
100
A
Emitter-base cutoff current (Collector open)
IEBO
VEB
= 5 V, I
C
= 0
10
A
Forward current transfer ratio *
hFE
VCE = 10 V, IC = 1 mA
70
220
Collector-emitter saturation voltage
VCE(sat)
IC = 10 mA, IB = 1 mA
0.1
V
Transition frequency
fT
VCB
= 10 V, I
E
= 1 mA, f = 200 MHz
150
300
MHz
Noise figure
NF
VCB = 10 V, IE = 1 mA, f = 5 MHz
2.8
4.0
dB
Reverse transfer impedance
Zrb
VCE = 10 V, IC = 1 mA, f = 2 MHz
22
50
Reverse transfer capacitance
Cre
VCE = 10 V, IC = 1 mA, f = 10.7 MHz
1.2
2.0
pF
(Common-emitter)
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
5.0±0.2
0.7±0.1
0.45
+0.15
–0.1
2.5
+0.6
–0.2
0.45
+0.15
–0.1
2.5
12 3
+0.6
–0.2
4.0±0.2
5.1
±
0.2
12.9
±
0.5
2.3
±
0.2
0.7
±
0.2
Rank
B
C
hFE
70 to 140
110 to 220
1 : Emitter
2 : Collector
3 : Base
TO-92-B1 Package
Note) The part number in the parenthesis shows conventional part number.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA0885(2SA885) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power Device - Power Transistors - Others |
| 2SA08850R | 功能描述:TRANS PNP HF 35VCEO 1A TO-126 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SA0885Q | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 1A I(C) | TO-126 |
| 2SA0885R | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 1A I(C) | TO-126 |
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