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参数资料
| 型号： | 2SA1013O |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | PLASTIC, TO-92MOD, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 353K |
| 代理商： | 2SA1013O |
2SA1013
PNP
Epitaxial Silicon
Transistor
Features
Capable of 0.9Watts of Power Dissipation.
Collector-current -1.0A
Collector-base Voltage -160V
Operating and storage junction temperature range: -55
℃ to +150℃
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=-1.0mAdc, IB=0)
-160
---
Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=-100uAdc, IE=0)
-160
---
Vdc
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=-10mAdc, IC=0)
-6.0
---
Vdc
ICBO
Collector Cutoff Current
(VCB=-150Vdc, IE=0)
---
-1.0
uAdc
ICEO
Collector Cutoff Current
(VCB=-120Vdc, IE=0)
---
-10
uAdc
IEBO
Emitter Cutoff Current
(VEB=-6.0Vdc, IC=0)
---
-1.0
uAdc
ON CHARACTERISTICS
hFE(1)
DC Current Gain
(IC=-200mAdc, VCE=-5.0Vdc)
65
310
---
hFE(2)
DC Current Gain
(IC=-50mAdc, VCE=-5.0Vdc)
40
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=-500mAdc, IB=-50mAdc)
---
-1.5
Vdc
VBE
Base-Emitter Saturation Voltage
(IC=-5.0mAdc, VCE=-5.0Vdc)
---
-0.75
Vdc
SMALL-SIGNAL CHARACTERISTICS
fT
Transistor Frequency
(IC=-200mAdc, VCE=-5.0Vdc,
f=30MHz)
-15
---
MHz
CLASSIFICATION OF HFE(1)
Rank
R
O
Y
Range
60-120
120-200
200-300
TO-92MOD
A
B
C
D
E
F
G
H
I
J
K
M
N
L
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
---
.030
---
.750
B
---
.039
---
1.00
C
---
.031
---
.80
D
---
.024
---
0.60
E
---
.201
---
5.10
F
.050
1.27
G
.050
1.27
H
.100
2.54
I
.039
1.00
J
---
.087
---
2.20
K
---
.024
---
.60
L
---
.323
---
8.20
M
---
.413
---
10.50
N
---
.161
---
4.10
123
1. EMITTER
2. COLLECTOR
3. BASE
omponents
20736 Marilla
Street Chatsworth
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$% !"#
MCC
Revision: 2
2006/05/17
TM
Micro Commercial Components
www.mccsemi.com
1 of 2
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
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| 2SA1013O-BP | 1000 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
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| 2SA1015TPE1 | 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1013-O | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:PNP Epitaxial Silicon Transistor |
| 2SA1013-O(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT PNP 160V 1A 3-Pin TO-92 Mod |
| 2SA1013-O(T6FJT,FM | |
| 2SA1013-O(TE6,F,M) | 功能描述:两极晶体管 - BJT Transistor PNP, 160V, 1A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SA1013-O,T6MIBF(J | 功能描述:TRANS PNP 1A 160V TO226-3 制造商:toshiba semiconductor and storage 系列:- 包装:散装 零件状态:停產 晶体管类型:PNP 电流 - 集电极（Ic）（最大值）:1A 电压 - 集射极击穿（最大值）:160V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:1.5V @ 50mA，500mA 电流 - 集电极截止（最大值）:1μA（ICBO） 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:60 @ 200mA，5V 功率 - 最大值:900mW 频率 - 跃迁:50MHz 工作温度:150°C（TJ） 安装类型:通孔 封装/外壳:TO-226-3，TO-92-3 长体 供应商器件封装:TO-92L 标准包装:1 |
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