参数资料
型号: 2SA1013O
元件分类: 小信号晶体管
英文描述: 1000 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封装: LEAD FREE, 2-5J1A, TO-92MOD, 3 PIN
文件页数: 2/5页
文件大小: 159K
代理商: 2SA1013O
2SA1013
2006-11-09
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 150 V, IE = 0
1.0
μA
Emitter cut-off current
IEBO
VEB = 6 V, IC = 0
1.0
μA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
160
V
DC current gain
hFE (Note) VCE = 5 V, IC = 200 mA
60
200
Collector-emitter saturation voltage
VCE (sat)
IC = 500 mA, IB = 50 mA
1.5
V
Base-emitter voltage
VBE
VCE = 5 V, IC = 5 mA
0.45
0.75
V
Transition frequency
fT
VCE = 5 V, IC = 200 mA
15
50
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
35
pF
Note: hFE classification R: 60 to 120, O: 100 to 200
Marking
A1013
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Characteristics
indicator
Part No. (or abbreviation code)
相关PDF资料
PDF描述
2SA1015TPE1 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2SA1015-OTPE2 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2SA1015YTPE2 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2SA1015-YTPER1 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2SA1015YTPER1 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
相关代理商/技术参数
参数描述
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2SA1013-O(T6FJT,FM
2SA1013-O(TE6,F,M) 功能描述:两极晶体管 - BJT Transistor PNP, 160V, 1A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SA1013-O,T6MIBF(J 功能描述:TRANS PNP 1A 160V TO226-3 制造商:toshiba semiconductor and storage 系列:- 包装:散装 零件状态:停產 晶体管类型:PNP 电流 - 集电极(Ic)(最大值):1A 电压 - 集射极击穿(最大值):160V 不同?Ib,Ic 时的?Vce 饱和值(最大值):1.5V @ 50mA,500mA 电流 - 集电极截止(最大值):1μA(ICBO) 不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值):60 @ 200mA,5V 功率 - 最大值:900mW 频率 - 跃迁:50MHz 工作温度:150°C(TJ) 安装类型:通孔 封装/外壳:TO-226-3,TO-92-3 长体 供应商器件封装:TO-92L 标准包装:1