- 您现在的位置：买卖IC网 > PDF目录71109 > 2SA1015(L)-GR 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 PDF资料下载
参数资料
| 型号： | 2SA1015(L)-GR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | 2-5F1B, SC-43, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 107K |
| 代理商： | 2SA1015(L)-GR |
2SA1015(L)
2003-03-27
1
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT process)
2SA1015(L)
Audio Frequency Amplifier Applications
Low Noise Amplifier Applications
High voltage and high current: VCEO = 50 V (min),
IC = 150 mA (max)
Excellent hFE linearity: hFE (2) = 80 (typ.) at VCE = 6 V, IC = 150 mA
: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
Low noise: NF = 0.2dB (typ.) (f = 1 kHz)
Complementary to 2SC1815 (L)
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
-50
V
Collector-emitter voltage
VCEO
-50
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-150
mA
Base current
IB
-50
mA
Collector power dissipation
PC
400
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
-55~125
°C
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = -50 V, IE = 0
-0.1
mA
Emitter cut-off current
IEBO
VEB = -5 V, IC = 0
-0.1
mA
hFE (1)
(Note)
VCE = -6 V, IC = -2 mA
70
400
DC current gain
hFE (2)
VCE = -6 V, IC = -150 mA
25
80
Collector-emitter saturation voltage
VCE (sat)
IC = -100 mA, IB = -10 mA
-0.1
-0.3
V
Base-emitter saturation voltage
VBE (sat)
IC = -100 mA, IB = -10 mA
-1.1
V
Transition frequency
fT
VCE = -10 V, IC = -1 mA
80
MHz
Collector output capacitance
Cob
VCB = -10 V, IE = 0
f
= 1 MHz
4
7
pF
Base intrinsic resistance
rbb’
VCB = -10 V, IE = 1 mA
f
= 30 MHz
30
W
NF (1)
VCE = -6 V, IC = -0.1 mA
f
= 100 Hz, RG = 10 kW
0.5
6
Noise figure
NF (2)
VCE = -6 V, IC = -0.1 mA
f
= 1 kHz, RG = 10 kW
0.2
3
dB
Note: hFE (1) classification O: 70~140, Y: 120~240, GR: 200~400
Unit: mm
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SA1175FF | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1175JF | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1175HF | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1319-R | 700 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1319R | 700 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1015LGR(F) | 制造商:Toshiba 功能描述:PNP Bulk |
| 2SA1015LO | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 150MA I(C) | TO-92 |
| 2SA1015LT1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:General purpose transistors |
| 2SA1015L-X-T92-B | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:LOW FREQUENCY PNP AMPLIFIER TRANSISTOR |
| 2SA1015L-X-T92-K | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:LOW FREQUENCY PNP AMPLIFIER TRANSISTOR |
发布紧急采购，3分钟左右您将得到回复。