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参数资料
| 型号： | 2SA1015-O |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件页数： | 1/3页 |
| 文件大小： | 170K |
| 代理商： | 2SA1015-O |
2SA1015
2007-11-01
1
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT process)
2SA1015
Audio Frequency General Purpose Amplifier Applications
Driver Stage Amplifier Applications
High voltage and high current: VCEO = 50 V (min),
IC = 150 mA (max)
Excellent hFE linearity: hFE (2) = 80 (typ.) at VCE = 6 V, IC = 150 mA
: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
Low noise: NF = 1dB (typ.) (f = 1 kHz)
Complementary to 2SC1815.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
150
mA
Base current
IB
50
mA
Collector power dissipation
PC
400
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 50 V, IE = 0
0.1
μA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
0.1
μA
hFE (1)
(Note)
VCE = 6 V, IC = 2 mA
70
400
DC current gain
hFE (2)
VCE = 6 V, IC = 150 mA
25
80
Collector-emitter saturation voltage
VCE (sat)
IC = 100 mA, IB = 10 mA
0.1
0.3
V
Base-emitter saturation voltage
VBE (sat)
IC = 100 mA, IB = 10 mA
1.1
V
Transition frequency
fT
VCE = 10 V, IC = 1 mA
80
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
4
7
pF
Base intrinsic resistance
rbb’
VCE = 10 V, IE = 1 mA, f = 30 MHz
30
Ω
Noise figure
NF
VCE = 6 V, IC = 0.1 mA, RG = 10 kΩ,
f
= 1 kHz
1.0
10
dB
Note: hFE (1) classification O: 70~140, Y: 120~240, GR: 200~400
Unit: mm
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)
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PDF描述 |
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| 2SA1015-Y | 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1015-O(F,T) | 制造商:Toshiba America Electronic Components 功能描述:TRANS PNP 50V 150MA TO-92 |
| 2SA1015-O(TE2,F,T) | 制造商:Toshiba America Electronic Components 功能描述:TRANS PNP 50V 150MA TO-92 |
| 2SA1015-O_11 | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:PNP Silicon Plastic-Encapsulate Transistor |
| 2SA1015OTE2T | 制造商:Toshiba America Electronic Components 功能描述:TRANS GP BJT PNP 50V 0.15A 3PIN TO-92 - Tape and Reel |
| 2SA1015-X-T92-B | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:LOW FREQUENCY PNP AMPLIFIER TRANSISTOR |
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