参数资料
型号: 2SA1030C
元件分类: 小信号晶体管
英文描述: 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封装: TO-92(1), 3 PIN
文件页数: 2/6页
文件大小: 160K
代理商: 2SA1030C
2SA1029, 2SA1030
Rev.3.00 Aug 10, 2005 page 2 of 5
Electrical Characteristics
(Ta = 25°C)
2SA1029
2SA1030
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V(BR)CBO
–30
–55
V
IC = –10 A, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO
–30
–50
V
IC = –1 mA, RBE =
Emitter to base
breakdown voltage
V(BR)EBO
–5
–5
V
IE = –10
A, IC = 0
Collector cutoff current
ICBO
–0.5
–0.5
A
VCB = –18 V, IE = 0
Emitter cutoff current
IEBO
–0.5
–0.5
A
VEB = –2 V, IC = 0
DC current trnsfer ratio
hFE*
1
100
500
100
320
VCE = –12 V,
IC = –2 mA
Base to emitter voltage
VBE
–0.8
–0.8
V
VCE = –12 V,
IC = –2 mA
Collector to emitter
saturation voltage
VCE(sat)
–0.2
–0.2
V
IC = –10 mA,
IB = –1 mA
Gain bandwidth product
fT
200
280
200
280
MHz
VCB = –12 V,
IC = –2 mA
Collector output
capacitance
Cob
3.3
4.0
3.3
4.0
pF
VCB = –10 V, IE = 0,
f = 1 MHz
Note:
1. The 2SA1029 and 2SA1030 are grouped by hFE as follows.
B
C
D
2SA1029
100 to 200
160 to 320
250 to 500
2SA1030
100 to 200
160 to 320
相关PDF资料
PDF描述
2SA1029C 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2SA1030B 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2SA1029DTZ 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2SA1029C 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2SA1029D 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
相关代理商/技术参数
参数描述
2SA1030CTZ 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial
2SA1031 制造商:Distributed By MCM 功能描述:SUB ONLY HITACHI TRANSISTORTO-92 -30V -.1A .2W ECB
2SA1031B 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | TO-92
2SA1031C 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SA1031D 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | TO-92