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参数资料
| 型号： | 2SA1032B |
| 元件分类： | 小信号晶体管 |
| 英文描述： | SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件页数： | 3/7页 |
| 文件大小： | 29K |
| 代理商： | 2SA1032B |
2SA1031, 2SA1032
3
Electrical Characteristics (Ta = 25°C)
2SA1031
2SA1032
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
–30
—
–55
—
V
I
C = –10 A, IE = 0
Collector to emitter
breakdown voltage
V
(BR)CEO
–30
—
–50
—
V
I
C = –1 mA, RBE = ∞
Emitter to base
breakdown voltage
V
(BR)EBO
–5
—
–5
—
V
I
E = –10 A, IC = 0
Collector cutoff current
I
CBO
—
–0.5
—
–0.5
AV
CB = –18 V, IE = 0
Emitter cutoff current
I
EBO
—
–0.5
—
–0.5
AV
EB = –2 V, IC = 0
DC current trnsfer ratio
h
FE*
1
100
—
500
100
—
320
V
CE = –12 V,
I
C = –2 mA
Base to emitter voltage
V
BE
—
–0.8
—
–0.8
V
CE = –12 V,
I
C = –2 mA
Collector to emitter
saturation voltage
V
CE(sat)
—
–0.2
—
–0.2
V
I
C = –10 mA,
I
B = –1 mA
Gain bandwidth product f
T
200
280
—
200
280
—
MHz
V
CE = –12 V,
I
C = –2 mA
Collector output
capacitance
Cob
—
3.3
4.0
—
3.3
4.0
pF
V
CB = –10 V, IE = 0,
f = 1 MHz
Noise figure
NF
—
5
—
5
dB
V
CE = –6 V,
I
C = –0.1 mA,
R
g = 500 ,
f = 120 Hz
Note:
1. The 2SA1031 and 2SA1032 are grouped by h
FE as follows.
BC
D
2SA1031
100 to 200
160 to 320
250 to 500
2SA1032
100 to 200
160 to 320
—
相关PDF资料 |
PDF描述 |
|---|---|
| 2SA1031-D | SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1031C | SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1031-B | SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1032 | SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1037-S-TP | 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1032C | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 100MA I(C) | TO-92 |
| 2SA1033 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTO TO-92 -30V -.1A .31W EBC |
| 2SA1034 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SA1034/2SA1035 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:2SA1034. 2SA1035 - PNP Transistor |
| 2SA10340SL | 功能描述:TRANS PNP 35VCEO 50MA MINI-3 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
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