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参数资料
| 型号： | 2SA1036-R |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 1/3页 |
| 文件大小： | 139K |
| 代理商： | 2SA1036-R |
PNP Silicon
Epitaxial Transistors
Features
omponents
20736 Marilla
Street Chatsworth
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MCC
Revision: 3
2008/01/01
TM
Micro Commercial Components
www.mccsemi.com
1 of
3
SOT-23
Suggested Solder
Pad Layout
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.110
.120
2.80
3.04
B
.083
.098
2.10
2.64
C
.047
.055
1.20
1.40
D
.035
.041
.89
1.03
E
.070
.081
1.78
2.05
F
.018
.024
.45
.60
G
.0005
.0039
.013
.100
H
.035
.044
.89
1.12
J
.003
.007
.085
.180
K
.015
.020
.37
.51
A
B
C
D
E
F
G
H
J
.079
2.000
inches
mm
.031
.800
.035
.900
.037
.950
.037
.950
K
Maximum Ratings @ Ta = 25
(unless otherwise noted)
Symbol
Parameter
Value
Unit
IC
Collector Current
-0.5
A
PD
Collector Power Dissipation
0.2
W
TJ
Junction Temperature
150
TSTG
Storage Temperature Range
-55 to +150
Electrical Characteristics @ 25
OC Unless Otherwise Specified
Symbol
Parameter
Min
TYPE
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=-1mAdc,IB=0)
-32
V
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=-100uAdc,IE=0)
-40
V
V(BR)EBO
Collector-Base Breakdown Voltage
(IE=-100uAdc,IC=0)
-5.0
V
ICBO
Collector-Base Cutoff Current
(VCB=-20Vdc, IE=0)
- 1
Adc
IEBO
Emitter-Base Cutoff Current
(VEB=-4.0Vdc, IC=0)
- 1
uAdc
ON CHARACTERISTICS
HFE
DC Current Gain
(IC=-10mAdc, VCE=-3.0Vdc)
82
390
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=-100mAdc, IB=-10mAdc)
-0.4
Vdc
)7
Transition Frequency
(VCE=-5Vdc,IC=-20mAdc,f=100MHZ)
200
MHZ
CLASSIFICATION OF
hFE
Rank
P
Q
R
Range
82-180
120-270
180-390
E
B
C
Large IC. ICMax.= -
0.5 A
Low VCE(sat). Ideal for low-voltage operation.
Case Material: Molded Plastic.
UL Flammability
Classification Rating 94V-0 and MSL Rating 1
Cob
(VCB=-10Vdc,IE=0,f=1MHZ)
7
pF
2SA1036-P
2SA1036-Q
2SA1036-R
Marking
HP
HQ
HR
相关PDF资料 |
PDF描述 |
|---|---|
| 2SA1036-Q | 500 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1037-R | 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1037-S | 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1037AKT146R | 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1037AK | 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1037 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SA1037_0712 | 制造商:BILIN 制造商全称:Galaxy Semi-Conductor Holdings Limited 功能描述:Silicon Epitaxial Planar Transistor |
| 2SA1037_10 | 制造商:SECOS 制造商全称:SeCoS Halbleitertechnologie GmbH 功能描述:PNP Silicon General Purpose Transistor |
| 2SA1037AK | 制造商:Panasonic Industrial Company 功能描述:TRANSISTORSUB:2SA1037K |
| 2SA1037AK_07 | 制造商:WEITRON 制造商全称:Weitron Technology 功能描述:PNP General Purpose Transistors |
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