- 您现在的位置：买卖IC网 > PDF目录41452 > 2SA1048(L)-O 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR PDF资料下载
参数资料
| 型号： | 2SA1048(L)-O |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | 2-4E1A, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 207K |
| 代理商： | 2SA1048(L)-O |
2SA1048(L)
2007-11-01
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1048(L)
Audio Frequency Amplifier Applications
Low Noise Audio Frequency Applications
Small package.
High voltage: VCEO = 50 V (min)
High hFE: hFE = 70~400
Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
Low noise: NF = 0.2dB (typ.), 3dB (max)
Complementary to 2SC2458 (L).
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
150
mA
Base current
IB
50
mA
Collector power dissipation
PC
200
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 50 V, IE = 0
0.1
μA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
0.1
μA
DC current gain
hFE
(Note)
VCE = 6 V, IC = 2 mA
70
400
Collector-emitter saturation voltage
VCE (sat)
IC = 100 mA, IB = 10 mA
0.1
0.3
V
Transition frequency
fT
VCE = 10 V, IC = 1 mA
80
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
4
7
pF
NF (1)
VCE = 6 V, IC = 0.1 mA, f = 100 Hz,
RG = 10 kΩ
0.5
6
Noise figure
NF (2)
VCE = 6 V, IC = 0.1 mA, f = 1 kHz,
RG = 10 kΩ
0.2
3
dB
Note: hFE classification O: 70~140, Y: 120~240, GR: 200~400
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-4E1A
Weight: 0.13 g (typ.)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SA1084D | 100 mA, 90 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1083 | 100 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1085 | 100 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1084E | 100 mA, 90 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1084 | 100 mA, 90 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1048LY | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 150MA I(C) | SPAK |
| 2SA1048O | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 150MA I(C) | SPAK |
| 2SA1048-O(F) | 制造商:Toshiba 功能描述:PNP Bulk |
| 2SA1048Y | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 150MA I(C) | SPAK |
| 2SA1048-Y(F) | 制造商:Toshiba 功能描述:PNP -50V -0.15A 120 to 240 MINI Bulk |
发布紧急采购，3分钟左右您将得到回复。