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参数资料
| 型号： | 2SA1049-GR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | 2-4E1A, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 121K |
| 代理商： | 2SA1049-GR |
2SA1049
2003-03-27
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1049
Audio Frequency Amplifier Applications
Small package.
High breakdown voltage: VCEO = 120 V
High hFE: hFE = 200~700
Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
Low noise: NF = 1dB (typ.), 10dB (max)
Complementary to 2SC2459.
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
-120
V
Collector-emitter voltage
VCEO
-120
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-100
mA
Base current
IB
-20
mA
Collector power dissipation
PC
200
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
-55~125
°C
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = -120 V, IE = 0
-0.1
mA
Emitter cut-off current
IEBO
VEB = -5 V, IC = 0
-0.1
mA
DC current gain
hFE
(Note)
VCE = -6 V, IC = -2 mA
200
700
Collector-emitter saturation voltage
VCE (sat)
IC = -10 mA, IB = -1 mA
-0.3
V
Transition frequency
fT
VCE = -6 V, IC = -1 mA
100
MHz
Collector output capacitance
Cob
VCB = -10 V, IE = 0, f = 1 MHz
4
pF
Noise figure
NF
VCE = -6 V, IC = -0.1 mA
f
= 1 kHz, RG = 10 kW
1.0
10
dB
Note: hFE classification GR: 200~400, BL: 350~700
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-4E1A
Weight: 0.13 g (typ.)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1049-GR(F) | 制造商:Toshiba 功能描述:PNP -120V -0.1A 200 to 400 MINI Bulk |
| 2SA1050 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Silicon PNP Power Transistors |
| 2SA1051 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Silicon PNP Power Transistors |
| 2SA1052 | 制造商:Distributed By MCM 功能描述:SUB ONLY HITACHI TRANS. SC-59-30V -.1A .15WSURFACE MOUNT |
| 2SA1052B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | SOT-23 |
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