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参数资料
| 型号： | 2SA1069-AZ |
| 元件分类： | 功率晶体管 |
| 英文描述： | 5 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封装： | MP-25, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 136K |
| 代理商： | 2SA1069-AZ |
Data Sheet D14855EJ3V0DS
2
2SA1069, 1069A
ELECTRICAL CHARACTERISTICS (TA = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector to emitter voltage
VCEO(SUS)
IC =
3.0 V, IB1 = 0.3 A, L = 1 mH
60/80
V
Collector to emitter voltage
VCEX(SUS)1
IC =
3.0 A, IB1 = IB2 = 0.3 A,
VBE(OFF) = 5.0 V, L = 180
H, clamped
60/80
V
Collector to emitter voltage
VCEX(SUS)2
IC =
6.0 A, IB1 = 0.6 A, IB2 = 0.3 A,
VBE(OFF) = 5.0 V, L = 180
H, clamped
60/80
V
Collector cutoff current
ICBO
VCB =
60/80 V, IE = 0 A
10
A
Collector cutoff current
ICER
VCE =
60/80 V, RBE = 51 , TA = 125 °C
1.0
mA
Collector cutoff current
ICEX1
VCE =
60/80 V, VBE(OFF) = 1.5 V
10
A
Collector cutoff current
ICEX2
VCE =
60/80 V, VBE(OFF) = 1.5 V,
TA = 125
°C
1.0
mA
Emitter cutoff current
IEBO
VEB =
5.0 V, IC = 0 A
10
A
DC current gain
hFE1
VCE =
5.0 V, IC = 0.3 ANote
40
DC current gain
hFE2
VCE =
5.0 V, IC = 0.3 ANote
40
200
Collector saturation voltage
VCE(sat)
IC =
3.0 A, IB = 0.3 ANote
0.6
V
Base saturation voltage
VBE(sat)
IC =
3.0 A, IB = 0.3 ANote
1.5
V
Turn-on time
ton
0.5
s
Storage time
tstg
2.5
s
Fall time
tf
IC =
3.0 A, RL = 17 ,
IB1 =
IB2 = 0.3 A, VCC 50 V
Refer to the test circuit.
0.5
s
Note Pulse test PW
≤ 350
s, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking
M
L
K
hFE2
40 to 80
60 to 120
100 to 200
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
Base current
waveform
Collector current
waveform
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1069A-Z | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING |
| 2SA1069A-Z-AZ-K | 制造商:Renesas Electronics 功能描述:Bulk |
| 2SA1069K | 制造商:Renesas Electronics 功能描述:PNP Bulk |
| 2SA1069-K-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SA1069L | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-220AB |
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