- 您现在的位置：买卖IC网 > PDF目录30476 > 2SA1081D 100 mA, 90 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 PDF资料下载
参数资料
| 型号： | 2SA1081D |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 90 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | TO-92, 3 PIN |
| 文件页数： | 4/6页 |
| 文件大小： | 135K |
| 代理商： | 2SA1081D |
2SK3149
Rev.4.00 Sep 07, 2005 page 2 of 7
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
100
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
20
A
Drain peak current
ID(pulse)
Note1
80
A
Body-drain diode reverse drain current
IDR
20
A
Avalanche current
IAP
Note3
20
A
Avalanche energy
EAR
Note3
40
mJ
Channel dissipation
Pch
Note2
50
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10s, duty cycle ≤ 1 %
2. Value at Tc = 25
°C
3. Value at Tch = 25
°C, Rg
≥ 50
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V(BR)DSS
100
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±20
—
V
IG =
±100 A, VDS = 0
Gate to source leak current
IGSS
—
±10
A
VGS =
±16 V, VDS = 0
Zero gate voltage drain current
IDSS
—
10
A
VDS = 100 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.0
—
2.5
V
ID = 1 mA, VDS = 10 V
RDS(on)
—
45
60
m
ID = 10 A, VGS = 10 V
Note4
Static drain to source on state
resistance
RDS(on)
—
65
85
m
ID = 10 A, VGS = 4 V
Note4
Forward transfer admittance
|yfs|
8.5
14
—
S
ID = 10 A, VDS = 10 V
Note4
Input capacitance
Ciss
—
900
—
pF
Output capacitance
Coss
—
400
—
pF
Reverse transfer capacitance
Crss
—
210
—
pF
VDS = 10 V, VGS = 0,
f = 1MHz
Turn-on delay time
td(on)
—
15
—
ns
Rise time
tr
—
120
—
ns
Turn-off delay time
td(off)
—
200
—
ns
Fall time
tf
—
150
—
ns
ID = 10 A, VGS = 10 V,
RL = 3
Body–drain diode forward voltage
VDF
—
0.9
—
V
IF = 20 A, VGS = 0
Body–drain diode reverse recovery
time
trr
—
90
—
ns
IF = 20 A, VGS = 0
diF/ dt = 50 A/
s
Note:
4. Pulse test
相关PDF资料 |
PDF描述 |
|---|---|
| 2SA1025D | 100 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1082E | 100 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1081 | 100 mA, 90 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1082D | 100 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1085ETZ-E | 100 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1081E | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 90V V(BR)CEO | 100MA I(C) | TO-92 |
| 2SA1082 | 制造商:SECOS 制造商全称:SeCoS Halbleitertechnologie GmbH 功能描述:PNP Plastic Encapsulated Transistor |
| 2SA1082D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 100MA I(C) | TO-92 |
| 2SA1082E | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 100MA I(C) | TO-92 |
| 2SA1083 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
发布紧急采购，3分钟左右您将得到回复。