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参数资料
| 型号： | 2SA1084 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 90 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | TO-92(1), 3 PIN |
| 文件页数： | 3/11页 |
| 文件大小： | 92K |
| 代理商： | 2SA1084 |
2SA1083, 2SA1084, 2SA1085
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1. This document may, wholly or partially, be subject to change without notice.
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this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any
other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual
property claims or other problems that may result from applications based on the examples described
herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third party or
Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
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相关PDF资料 |
PDF描述 |
|---|---|
| 2SA1085ERR | 100 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1084DRF | 100 mA, 90 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1084ERF | 100 mA, 90 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1085DRF | 100 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1083DRF | 100 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1084D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 90V V(BR)CEO | 100MA I(C) | TO-92 |
| 2SA1084E | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 90V V(BR)CEO | 100MA I(C) | TO-92 |
| 2SA1084ETZ | 功能描述:TRANSISTOR PNP 90V 100MA TO-92 RoHS:否 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SA1084ETZ-E | 功能描述:TRANSISTOR PNP 90V 100MA TO-92 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SA1085 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
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