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参数资料
| 型号： | 2SA1091-R |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | 2-5F1B, SC-43, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 277K |
| 代理商： | 2SA1091-R |
2SA1091
2007-11-01
1
TOSHIBA Transistor
Silicon PNP Triple Diffused Type (PCT process)
2SA1091
High Voltage Control Applications
Plasma Display, Nixie Tube Driver Applications
Cathode Ray Tube Brightness Control Applications
High voltage: VCBO = 300 V, VCEO = 300 V
Low saturation voltage: VCE (sat) = 0.5 V (max)
Small collector output capacitance: Cob = 6 pF (typ.)
Complementary to 2SC2551.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
300
V
Collector-emitter voltage
VCEO
300
V
Emitter-base voltage
VEBO
8
V
Collector current
IC
100
mA
Base current
IB
20
mA
Collector power dissipation
PC
400
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 300 V, IE = 0
0.1
μA
Emitter cut-off current
IEBO
VEB = 8 V, IC = 0
0.1
μA
Collector-base breakdown voltage
V (BR) CBO
IC = 0.1 mA, IE = 0
300
V
Collector-emitter breakdown voltage
V (BR) CEO
IC = 1 mA, IB = 0
300
V
hFE (1)
(Note)
VCE = 10 V, IC = 20 mA
30
150
DC current gain
hFE (2)
VCE = 10 V, IC = 1 mA
20
Collector-emitter saturation voltage
VCE (sat)
IC = 20 mA, IB = 2 mA
0.5
V
Base-emitter saturation voltage
VBE (sat)
IC = 20 mA, IB = 2 mA
1.2
V
Transition frequency
fT
VCE = 10 V, IC = 20 mA
40
60
MHz
Collector output capacitance
Cob
VCB = 20 V, IE = 0, f = 1 MHz
6
8
pF
Note: hFE (1) classification R: 30~90 O: 50~150
Unit: mm
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SA1091 | 100 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1121C | 500 mA, 35 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1121D | 500 mA, 35 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1121 | 500 mA, 35 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1121C | 500 mA, 35 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1091-R(F) | 制造商:Toshiba 功能描述:PNP Bulk |
| 2SA1091-R(TPE2,F) | 功能描述:两极晶体管 - BJT Bipolar Small Signal Transistors RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SA1092 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-92-60V -.05A .4W ECB |
| 2SA1093 | 制造商:Distributed By MCM 功能描述:SUB ONLY TOSHIBA TRANSISTORSC-65 -140V -10A 100W BCE |
| 2SA1094 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SILICON PNP EPITAXIAL TRANSISTOR |
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