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参数资料
| 型号： | 2SA1121-B |
| 元件分类： | 小信号晶体管 |
| 英文描述： | SMALL SIGNAL TRANSISTOR |
| 文件页数： | 2/5页 |
| 文件大小： | 23K |
| 代理商： | 2SA1121-B |
2SA1121
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
–35
V
Collector to emitter voltage
V
CEO
–35
V
Emitter to base voltage
V
EBO
–4
V
Collector current
I
C
–500
mA
Collector power dissipation
P
C
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
–35
—
V
I
C = –10 A, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
–35
—
V
I
C = –1 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
–4
—
V
I
E = –10 A, IC = 0
Collector cutoff current
I
CBO
—
–0.5
AV
CB = –20 V, IE = 0
Collector to emitter saturation
voltage
V
CE(sat)
—
–0.2
–0.6
V
I
C = –150 mA, IB = –15 mA
DC current transfer ratio
h
FE*
1
60
—
320
V
CE = –3 V, IC = –10 mA
h
FE
10
—
V
CE = –3 V, IC = –500 mA
(Pulse test)
Base to emitter voltage
V
BE
—
–0.64
—
V
CE = –3 V, IC = –10 mA
Note:
1. The 2SA1121 is grouped by h
FE as follows.
Grade
B
C
D
Mark
SB
SC
SD
h
FE
60 to 120
100 to 200
160 to 320
See characteristic curves of 2SA673.
相关PDF资料 |
PDF描述 |
|---|---|
| 2SA1122 | 100 mA, 55 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1122D | 100 mA, 55 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1122C | 100 mA, 55 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1122C | 100 mA, 55 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1127S | 100 mA, 55 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1121C | 制造商:未知厂家 制造商全称:未知厂家 功能描述:BJT |
| 2SA1121D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:BJT |
| 2SA1121SB | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 500MA I(C) | SOT-23 |
| 2SA1121SC | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 500MA I(C) | SOT-23 |
| 2SA1121-SC(TL-E) | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans GP BJT PNP 35V 0.5A 3-Pin MPAK T/R |
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