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参数资料
| 型号： | 2SA1121SDTL-E |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 35 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | LEAD FREE, SC-59A, MPAK-3 |
| 文件页数： | 2/5页 |
| 文件大小： | 65K |
| 代理商： | 2SA1121SDTL-E |
2SA1121
Rev.2.00 Aug 10, 2005 page 2 of 4
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown voltage
V(BR)CBO
–35
—
V
IC = –10
A, IE = 0
Collector to emitter breakdown voltage
V(BR)CEO
–35
—
V
IC = –1 mA, RBE =
∞
Emitter to base breakdown voltage
V(BR)EBO
–4
—
V
IE = –10
A, IC = 0
Collector cutoff current
ICBO
—
–0.5
A
VCB = –20 V, IE = 0
Collector to emitter saturation voltage
VCE(sat)
—
–0.2
–0.6
V
IC = –150 mA, IB = –15 mA
DC current transfer ratio
hFE*
1
100
—
320
VCE = –3 V, IC = –10 mA
hFE
10
—
VCE = –3 V, IC = –500 mA
(Pulse test)
Base to emitter voltage
VBE
—
–0.64
—
V
VCE = –3 V, IC = –10 mA
Note:
1. The 2SA1121 is grouped by hFE as follows.
Grade
C
D
Mark
SC
SD
hFE
100 to 200
160 to 320
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PDF描述 |
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| 2SA1121SCTL-E | 500 mA, 35 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1129-M-AZ | 7 A, 30 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 2SA1129-K | 7 A, 30 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 2SA1129-L-AZ | 7 A, 30 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 2SA1129-L-AZ | 7 A, 30 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1121SDTL-H | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SA1122 | 制造商:KEXIN 制造商全称:Guangdong Kexin Industrial Co.,Ltd 功能描述:Silicon PNP Epitaxial |
| 2SA1122B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:BJT |
| 2SA1122C | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 55V V(BR)CEO | 100MA I(C) | SOT-346 |
| 2SA1122CCTL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
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